Diode having vertical structure
First Claim
1. A light emitting device, comprising:
- a GaN-based layer having a multilayer structure comprising an n-type layer, an active layer, and a p-type layer comprising aluminum, the GaN-based layer having a first surface and a second surface;
a first electrode including at least three layers on the first surface of the GaN-based layer; and
a second electrode and a pad on the second surface of the GaN-based layer,wherein the active layer comprises AlInGaN,wherein the first electrode includes Ni and Au,wherein the second electrode and the pad include Cr and Au, andwherein first and second layers of the first electrode have a same width and a third layer of the first electrode has a different width than the first and second layers.
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Abstract
A light emitting device can include a GaN layer having a multilayer structure that can include an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, the conductive structure includes a first electrode in contact with the first surface of the GaN layer, the first electrode is configured to reflect light from the active layer back through the second surface of the GaN layer; and a metal layer including Au, in which the metal layer serves as a first pad; a second electrode on the second surface of the GaN layer; and a second pad on the second electrode, in which a thickness of the second pad is about 0.5 μm or higher.
228 Citations
17 Claims
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1. A light emitting device, comprising:
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a GaN-based layer having a multilayer structure comprising an n-type layer, an active layer, and a p-type layer comprising aluminum, the GaN-based layer having a first surface and a second surface; a first electrode including at least three layers on the first surface of the GaN-based layer; and a second electrode and a pad on the second surface of the GaN-based layer, wherein the active layer comprises AlInGaN, wherein the first electrode includes Ni and Au, wherein the second electrode and the pad include Cr and Au, and wherein first and second layers of the first electrode have a same width and a third layer of the first electrode has a different width than the first and second layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting device, comprising:
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a metal layer; a reflective conductive layer on the metal layer, the reflective conductive layer serving as a first electrode; a first-type GaN-based layer having a first surface on the reflective conductive layer; an active layer on the first-type GaN-based layer, the active layer comprising AlInGaN; a second-type GaN-based layer on the active layer; a second electrode on a second surface of the second-type GaN-based layer; and a pad on the second electrode, wherein the second surface is opposite the first surface with respect to the active layer, wherein the reflective conductive layer is configured such that the reflective conductive layer reflects light from the active layer back through the first surface, and wherein a thickness of the pad is about 0.5 μ
m or higher. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification