Semiconductor light emitting device of a flip chip and method for manufacturing same
First Claim
1. A semiconductor light emitting device comprising:
- multiple semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interposed between the first and second semiconductor layers and adapted to generate light by electron-hole recombination;
an electrode electrically connected with the multiple semiconductor layers;
a light absorption barrier disposed under the electrode; and
a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the electrode and the vicinity of the electrode;
wherein a portion of the light absorption barrier exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode in order to block the light from the active layer entering the abnormal region.
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Accused Products
Abstract
Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.
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Citations
14 Claims
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1. A semiconductor light emitting device comprising:
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multiple semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interposed between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed under the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the electrode and the vicinity of the electrode; wherein a portion of the light absorption barrier exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode in order to block the light from the active layer entering the abnormal region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification