Magnetic memory element with iridium anti-ferromagnetic coupling layer
First Claim
1. A magnetic memory element comprising:
- a magnetic free layer structure including a first magnetic free layer and a second magnetic free layer with a first perpendicular enhancement layer (PEL) interposed therebetween, said first and second magnetic free layers having a same variable magnetization direction substantially perpendicular to layer planes of said first and second magnetic free layers;
an insulating tunnel junction layer formed adjacent to said first magnetic free layer;
a magnetic reference layer structure including a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to said insulating tunnel junction layer, a second magnetic reference layer comprising cobalt, and a second perpendicular enhancement layer (PEL) comprising molybdenum interposed between said first and second magnetic reference layers, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes of said first and second magnetic reference layers;
an iridium layer formed adjacent to said second magnetic reference layer opposite said second perpendicular enhancement layer; and
a magnetic fixed layer structure formed adjacent to said iridium layer opposite said magnetic reference layer structure, said magnetic fixed layer structure being anti-ferromagnetically coupled to said magnetic reference layer structure and having a second fixed magnetization direction that is substantially perpendicular to a layer plane of said magnetic fixed layer structure and is substantially opposite to said first fixed magnetization direction.
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Accused Products
Abstract
The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.
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Citations
20 Claims
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1. A magnetic memory element comprising:
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a magnetic free layer structure including a first magnetic free layer and a second magnetic free layer with a first perpendicular enhancement layer (PEL) interposed therebetween, said first and second magnetic free layers having a same variable magnetization direction substantially perpendicular to layer planes of said first and second magnetic free layers; an insulating tunnel junction layer formed adjacent to said first magnetic free layer; a magnetic reference layer structure including a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to said insulating tunnel junction layer, a second magnetic reference layer comprising cobalt, and a second perpendicular enhancement layer (PEL) comprising molybdenum interposed between said first and second magnetic reference layers, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes of said first and second magnetic reference layers; an iridium layer formed adjacent to said second magnetic reference layer opposite said second perpendicular enhancement layer; and a magnetic fixed layer structure formed adjacent to said iridium layer opposite said magnetic reference layer structure, said magnetic fixed layer structure being anti-ferromagnetically coupled to said magnetic reference layer structure and having a second fixed magnetization direction that is substantially perpendicular to a layer plane of said magnetic fixed layer structure and is substantially opposite to said first fixed magnetization direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification