Low resistance vertical cavity light source with PNPN blocking
First Claim
1. A semiconductor vertical resonant cavity light source, comprising:
- an upper p-type mirror and a lower n-type mirror;
an active region for light generation between said upper mirror and said lower mirror;
said light source including an inner mode confinement region and an outer current blocking region;
said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror,a conducting channel comprising acceptor impurities in said inner mode confinement region;
wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower mirror, and said lower mirror.
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Abstract
A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.
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Citations
20 Claims
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1. A semiconductor vertical resonant cavity light source, comprising:
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an upper p-type mirror and a lower n-type mirror; an active region for light generation between said upper mirror and said lower mirror; said light source including an inner mode confinement region and an outer current blocking region; said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror, a conducting channel comprising acceptor impurities in said inner mode confinement region; wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower mirror, and said lower mirror. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 19)
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10. A semiconductor vertical resonant cavity light source, comprising:
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an upper mirror and a lower mirror; an active region for light generation between said upper mirror and said lower mirror; said light source including an inner mode confinement region and an outer current blocking region; said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror; an upper p-type layer above said epitaxially regrown interface; a lower n-type layer below said active region; a conducting channel comprising acceptor impurities in said inner mode confinement region; wherein said outer current blocking region provides a PNPN current blocking region comprising said upper p-type layer, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first impurity doped region and said lower n-type layer below said active region, and said lower n-type layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 20)
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Specification