Micro electro mechanical system, semiconductor device, and manufacturing method thereof

• US 10,035,388 B2
• Filed: 03/16/2017
• Issued: 07/31/2018
• Est. Priority Date: 10/17/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamaguchi, Mayumi, Izumi, Konami, Tateishi, Fuminori
• Primary Examiner(s): Choi, Calvin
• Application Number:
  US15/460,293
• Publication Number:
  US 20170182853A1
• Time in Patent Office: 502 Days
• Field of Search: None
• CPC Class Codes: A61B 5/02444 Details of sensor A61B5/02427 takes precedence
• CPC Class Codes: A61B 5/681 Wristwatch-type devices
• CPC Class Codes: B60C 23/04 mounted on the wheel or tyre
• CPC Class Codes: B60C 23/0408 transmitting the signals by non-mechanical means from the wheel or tyre to a vehicle body mounted receiver
• CPC Class Codes: B60C 23/0411 Piezoelectric generators
• CPC Class Codes: B60C 23/0413 Wireless charging of active radio frequency circuits
• CPC Class Codes: B60C 23/0493 for attachment on the tyre
• CPC Class Codes: B60C 23/20 Devices for measuring or signalling tyre temperature only
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: G01L 1/16 using properties of piezoelectric devices
• CPC Class Codes: G01L 17/00 Devices or apparatus for measuring tyre pressure or the pressure in other inflated bodies
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/54 Providing fillings in containers, e.g. gas fillings
• CPC Class Codes: H01L 24/93 Batch processes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H10N 10/01 : Manufacture or treatment
• CPC Class Codes: H10N 30/03 : Assembling devices that include piezoelectric or electrostrictive parts
• CPC Class Codes: H10N 30/071 : Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
• CPC Class Codes: H10N 30/073 : by fusion of metals or by adhesives
• CPC Class Codes: H10N 39/00 : Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
• CPC Class Codes: Y10T 29/42 : Piezoelectric device making

Abstract

The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

Claims

1. A tire comprising a wheel and a semiconductor device attached to the wheel, the semiconductor device comprising:

a transistor over a film substrate;

an insulating layer over the transistor;

a sensor over the insulating layer, the sensor comprising a first electrode and a second electrode and electrically connected to the transistor; and

a first spacer layer between the insulating layer and the sensor,

wherein the first spacer layer comprises an anisotropic conductive agent.

2. The tire according to claim 1, wherein the semiconductor device further comprises:

a substrate over the sensor; and

a second spacer layer between the substrate and the sensor.

3. The tire according to claim 2, wherein the second spacer layer overlaps with the first spacer layer.

4. The tire according to claim 2, wherein a part of the first electrode and a part of the second electrode contact with both of the first and second spacer layers.

5. The tire according to claim 1, wherein the sensor is a pressure sensor.

6. The tire according to claim 1, wherein the sensor is a temperature sensor.

7. The tire according to claim 1, wherein the semiconductor device is attached to a valve part of the wheel.

8. A vehicle having the tire according to claim 1.

9. A tire comprising a wheel and a semiconductor device attached to the wheel, the semiconductor device comprising:

a control circuit including a transistor over a film substrate;

a sensor over the control circuit, the sensor comprising a first electrode and a second electrode and electrically connected to the control circuit; and

an antenna electrically connected to the control circuit; and

a first spacer layer between the control circuit and the sensor,

wherein the first spacer layer comprises an anisotropic conductive agent.

10. The tire according to claim 9, wherein the semiconductor device further comprises:

a substrate over the sensor; and

a second spacer layer between the substrate and the sensor.

11. The tire according to claim 10, wherein the second spacer layer overlaps with the first spacer layer.

12. The tire according to claim 10, wherein a part of the first electrode and a part of the second electrode contact with both of the first and second spacer layers.

13. The tire according to claim 9, wherein the sensor is a pressure sensor.

14. The tire according to claim 9, wherein the sensor is a temperature sensor.

15. The tire according to claim 9, wherein the semiconductor device is attached to a valve part of the wheel.

16. A vehicle having the tire according to claim 9.