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Plasma processing apparatus

  • US 10,037,868 B2
  • Filed: 02/20/2015
  • Issued: 07/31/2018
  • Est. Priority Date: 03/25/2014
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus comprising:

  • a processing chamber disposed inside a vacuum vessel;

    a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber;

    a sample stage disposed inside the processing chamber, on an upper surface of which the sample is placed;

    a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage so that a waveform of the second high-frequency power is synchronized with a reference cyclical signal and capable of variably adjusting the output time, anda controller configured to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in a waveform of current or voltage in a transient state of the second high-frequency power, the temporal change in the waveform in the transient state of the second high-frequency power being synchronized with a start of the intermittent output of the second high-frequency power and being detected by comparing, with each other, a plurality of waveforms of current or voltage which are detected in a predetermined time length in the transient state of the second high-frequency power.

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