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Semiconductor device and a method for fabricating the same

  • US 10,037,995 B2
  • Filed: 11/18/2016
  • Issued: 07/31/2018
  • Est. Priority Date: 02/10/2016
  • Status: Active Grant
First Claim
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1. A method of manufacturing gate structures for plural field effect transistors (FETs) in a semiconductor device, the method comprising:

  • forming a gate dielectric layer over each of channel layers for the FETs;

    forming a first conductive layer over the gate dielectric layer;

    forming a work function adjustment material (WFM) layer over the first conductive layer; and

    forming a second conductive layer over the WFM layer, wherein;

    the forming the WFM layer for at least one FET includes at least one first operation of forming one or more conductive layers and etching the one or more conductive layers, thereby exposing the first conductive layer,the forming the WFM layer for at least one FET includes at least one second operation of forming a conductive layer and not etching the conductive layer,the FETs include a first n-channel FET, a second n-channel FET and a third n-channel FET,the forming the WFM layer for the first n-channel FET includes three first operations, andthe forming the WFM layer for the second and third n-channel FETs includes two first operations.

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