Light detector

• US 10,038,022 B1
• Filed: 10/16/2017
• Issued: 07/31/2018
• Est. Priority Date: 09/04/2017
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Chen, Te-Ming, Chen, Tsung-Han, Wu, Sheng-Chen, Zhou, Geng-Qun, Chen, Ying-Hsien
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): Tynes, Jr., Lawrence
• Application Number:
  US15/784,199
• Time in Patent Office: 288 Days
• Field of Search: 257 72
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02322 comprising luminescent members, e.g. fluorescent sheets upon the device

Abstract

A light detector including an invisible light converting substrate, a light sensing element, a first protection layer, a thin film transistor, a first conductive pattern and a second protection layer is provided. The light sensing element and the thin film transistor are disposed on the invisible light converting substrate. The first protection layer covers the invisible light converting substrate and a second electrode of the light sensing element. The first protection layer has a via overlapped with the second electrode of the light sensing element. The first conductive pattern is disposed on the first protection layer and electrically connected to the second electrode of the light sensing element through the via of the first protection layer. The first conductive pattern is electrically connected between the second electrode of the light sensing element and a source of the thin film transistor.

Claims

1. A light detector, comprising:

an invisible light converting substrate, converting an invisible light into a visible light;

a light sensing element, disposed on the invisible light converting substrate to detect the visible light, the light sensing element comprising;

a first electrode and a second electrode; and

an optoelectric converting layer, disposed between the first electrode and the second electrode, wherein the first electrode is close to the invisible light converting substrate, the second electrode is away from the invisible light converting substrate, and a material of the first electrode comprises a transparent or a semi-transparent material;

a first protection layer, covering the invisible light converting substrate and the second electrode of the light sensing element, wherein the first protection layer comprises a via, the via is overlapped with at least part of the second electrode;

a thin film transistor, disposed on the invisible light converting substrate, wherein the thin film transistor comprises a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode and a drain electrode electrically connected with the semiconductor layer, the semiconductor layer is disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, and the gate insulating layer is disposed between the semiconductor layer and the gate electrode;

a first conductive pattern, disposed on the first protection layer, wherein the first conductive pattern is electrically connected with the second electrode of the light sensing element through the via of the first protection layer, and the first conductive pattern is electrically connected between the second electrode of the light sensing element and the source electrode of the thin film transistor; and

a second protection layer, covering the thin film transistor, the first conductive pattern and the light sensing element.

2. The light detector according to claim 1, wherein the light detector further comprises:

a data line, disposed on the invisible light converting substrate and electrically connected with the drain electrode; and

a scan line, disposed on the invisible light converting substrate and electrically connected with the gate electrode.

3. The light detector according to claim 2, further comprising:

a second conductive pattern, electrically connected between the gate electrode and the scan line, wherein the second conductive pattern is disposed on the gate insulating layer, the second protection layer covers the second conductive pattern.

4. The light detector according to claim 3, wherein a width of at least part of the second conductive pattern is smaller than a width of the gate electrode.

5. The light detector according to claim 1, wherein a width of at least part of the first conductive pattern is smaller than a width of the source electrode.

6. The light detector according to claim 1, wherein the first conductive pattern further covers the light sensing element.

7. The light detector according to claim 1, wherein the thin film transistor is a top gate type of the thin film transistor.

8. The light detector according to claim 1, wherein the source electrode and the drain electrode are disposed on the first protection layer;

the semiconductor layer, the gate insulating layer and the gate electrode are disposed on the source electrode and the drain electrode.

9. The light detector according to claim 8, wherein the first conductive pattern is disposed between the gate insulating layer and the first protection layer.

10. The light detector according to claim 1, wherein a distance between a surface of the gate electrode and a surface of the second protection layer is smaller than a distance between a surface of the first conductive pattern and the surface of the second protection layer.

11. The light detector according to claim 1, further comprising:

a light shielding pattern, disposed between the invisible light converting substrate and the thin film transistor, wherein the light shielding pattern is overlapped with at least part of the semiconductor layer.

12. The light detector according to claim 11, wherein the light shielding pattern comprises a predetermined electrical potential.

13. The light detector according to claim 11, wherein the light shielding pattern is electrically connected with the drain electrode of the thin film transistor.

14. The light detector according to claim 11, wherein the light shielding pattern is electrically connected with the first electrode of the light sensing element.

15. The light detector according to claim 1, wherein the invisible light converting substrate comprises a first base and an invisible light wavelength converting material disposed on the first base.

16. The light detector according to claim 1, wherein the invisible light converting substrate comprises a first base and an invisible light wavelength converting material mixed in the first base.

17. The light detector according to claim 1, wherein the invisible light converting substrate comprises a first base, a second base, and an invisible light wavelength converting material disposed between the first base and the second base.

18. The light detector according to claim 1, wherein the invisible light comprises one of an infrared light, a UV light, an X-ray, and a γ

-ray.

19. The light detector according to claim 1, further comprising:

a conductive line, disposed on the invisible light converting substrate, and electrically connected with the first electrode that is closer to the invisible light converting substrate in the light sensing element.