Light-emitting device and method of manufacturing thereof

• US 10,038,128 B2
• Filed: 09/12/2017
• Issued: 07/31/2018
• Est. Priority Date: 07/05/2013
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Huang, Chien-Fu, Chan, Yao-Ning, Hsu, Tzu Chieh, Chen, Yi-ming, Chiu, Hsin-Chih, Lu, Chih-Chiang, Hsu, Chia-liang, Chang, Chun-Hsien
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US15/702,286
• Publication Number:
  US 20180006206A1
• Time in Patent Office: 322 Days
• Field of Search: None
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

Claims

1. A method of manufacturing a light-emitting device, comprising:

providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer;

conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate;

providing an element substrate comprising a patterned metal layer and a via, wherein a conductive material fills in the via; and

conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

2. The method of manufacturing a light-emitting device of claim 1, further comprising forming a first electrode on the first semiconductor stacked block or on the second semiconductor stacked block, and the bonding step comprising bonding and aligning the first electrode with the patterned metal layer.

3. The method of manufacturing a light-emitting device of claim 2, further comprising forming a second electrode on the first semiconductor stacked block or on the second semiconductor stacked block, wherein the first electrode and the second electrode are formed on the same side of the first semiconductor stacked block or the second semiconductor stacked block.

4. The method of manufacturing a light-emitting device of claim 3, wherein the bonding step comprising bonding and aligning the first electrode and the second electrode with the patterned metal layer.

5. The method of manufacturing a light-emitting device of claim 1, wherein the plurality of semiconductor stacked blocks further comprises a third semiconductor stacked block and a fourth semiconductor stacked block, and the separating step comprises:

providing a second substrate;

conducting a first bonding step to bond the first semiconductor stacked block and the third semiconductor stacked block with the second substrate; and

separating the first semiconductor stacked block and the third semiconductor stacked block from the first substrate, and the second semiconductor stacked block and the fourth semiconductor stacked block remain on the first substrate.

6. The method of manufacturing a light-emitting device of claim 5, wherein the bonding step comprises bonding the second semiconductor stacked block and the fourth semiconductor stacked block with the patterned metal layer, or bonding the first semiconductor stacked block and the third semiconductor stacked block with the patterned metal layer.

7. The method of manufacturing a light-emitting device of claim 6, further comprising forming a dielectric layer between the first semiconductor stacked block and the third semiconductor stacked block, or forming a dielectric layer between the second semiconductor stacked block and the fourth semiconductor stacked block.

8. The method of manufacturing a light-emitting device of claim 6, further comprising separating the first semiconductor stacked block or the third semiconductor stacked block from the second substrate, or separating the second semiconductor stacked block or the fourth semiconductor stacked block from the first substrate.

9. The method of manufacturing a light-emitting device of claim 5, further comprising forming a first electrode and a second electrode on the second semiconductor stacked block and the fourth semiconductor stacked block respectively, or forming a first electrode and a second electrode on the first semiconductor stacked block and the third semiconductor stacked block respectively.

10. The method of manufacturing a light-emitting device of claim 9, wherein the bonding step further comprises bonding and aligning the patterned metal layer of the element substrate with the first electrode and the second electrode in order to form series connection or parallel connection between the second semiconductor stacked block and the fourth semiconductor stacked block, or in order to form series connection or parallel connection between the first semiconductor stacked block and the third semiconductor stacked block.

11. The method of manufacturing a light-emitting device of claim 1, wherein the first substrate is a growth substrate of the plurality of semiconductor stacked blocks.

12. The method of manufacturing a light-emitting device of claim 1, wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μ

m.

13. The method of manufacturing a light-emitting device of claim 1, wherein the element substrate further comprises a second patterned metal layer spaced apart from the patterned metal layer.

14. The method of manufacturing a light-emitting device of claim 1, wherein the bonding step is conducted after the separating step.

15. The method of manufacturing a light-emitting device of claim 1, wherein the separating step is conducted after the bonding step.

16. The method of manufacturing a light-emitting device of claim 1, further comprising forming a transparent encapsulated material on the element substrate to cover the first semiconductor stacked block or the second semiconductor stacked block which is bonded to the element substrate.

17. The method of manufacturing a light-emitting device of claim 1, wherein the patterned metal layer electrically connects to the conductive material in the via.

18. The method of manufacturing a light-emitting device of claim 17, wherein the patterned metal layer electrically connects to the conductive material in the via by the first semiconductor stacked block or the second semiconductor stacked block.

19. The method of manufacturing a light-emitting device of claim 1, further comprising forming a sacrificial layer on the first semiconductor stacked block before the separating step.

20. A method of manufacturing a light-emitting device, comprising:

providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer, wherein the first substrate is a growth substrate of the plurality of semiconductor stacked blocks;

conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate;

providing an element substrate comprising a patterned metal layer; and

conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

21. A method of manufacturing a light-emitting device, comprising:

providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer;

conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate;

forming a first electrode on the first semiconductor stacked block or on the second semiconductor stacked block;

providing an element substrate comprising a patterned metal layer; and

conducting a bonding step to bond and align the patterned metal layer with the first electrode which is on the first semiconductor stacked block or on the second semiconductor stacked block.

22. The method of manufacturing a light-emitting device of claim 21, further comprising forming a second electrode on the first semiconductor stacked block or on the second semiconductor stacked block, wherein the first electrode and the second electrode are formed on the same side of the first semiconductor stacked block or the second semiconductor stacked block.

23. A method of manufacturing a light-emitting device, comprising:

providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer;

conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate;

providing an element substrate comprising a patterned metal layer;

conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer; and

forming a transparent encapsulated material on the element substrate to cover the first semiconductor stacked block or the second semiconductor stacked block which is bonded to the element substrate.