MRAM device and method for fabricating the same
First Claim
1. A semiconductor device structure, comprising:
- a magnetoresistive random access memory (MRAM) device in an insulating layer, comprising;
a first electrode;
a magnetic tunnel junction (MTJ) over the first electrode, wherein the MTJ comprises a tunnel barrier layer encapsulating a free layer;
a second electrode over the MTJ; and
an insulating spacer surrounding sidewalls of the MTJ and the second electrode, wherein top surfaces of the insulating spacer and the second electrode are exposed from the insulating layer; and
a conductive pad over the insulating layer and electrically connected to the second electrode, wherein the MTJ is entirely covered by the conductive pad.
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a magnetoresistive random access memory (MRAM) device in an insulating layer. The MRAM device includes a first electrode, a magnetic tunnel junction (MTJ) over the first electrode, a second electrode over the MTJ, and an insulating spacer surrounding sidewalls of the first electrode, the MTJ, and the second electrode. Top surfaces of the insulating spacer and the second electrode are exposed from the insulating layer. The semiconductor device structure also includes a conductive pad over the insulating layer and electrically connected to the second electrode. The MTJ is entirely covered by the conductive pad.
47 Citations
20 Claims
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1. A semiconductor device structure, comprising:
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a magnetoresistive random access memory (MRAM) device in an insulating layer, comprising; a first electrode; a magnetic tunnel junction (MTJ) over the first electrode, wherein the MTJ comprises a tunnel barrier layer encapsulating a free layer; a second electrode over the MTJ; and an insulating spacer surrounding sidewalls of the MTJ and the second electrode, wherein top surfaces of the insulating spacer and the second electrode are exposed from the insulating layer; and a conductive pad over the insulating layer and electrically connected to the second electrode, wherein the MTJ is entirely covered by the conductive pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device structure, comprising:
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a first conductive feature; a magnetoresistive random access memory (MRAM) device in an insulating layer and over the first conductive feature, comprising; a first electrode electrically connected to the first conductive feature; a magnetic tunnel junction (MTJ) over the first electrode; a second electrode over the MTJ, wherein top surfaces of the insulating spacer, the second electrode, and the insulating layer are substantially level with each other; and an insulating spacer surrounding sidewalls of the MTJ and the second electrode; a conductive pad over the insulating layer and the MRAM device, and electrically connected to the second electrode, wherein the conductive pad has a width greater than a width of the MTJ, such that the MTJ is entirely covered by the conductive pad; and a second conductive feature over and electrically connected to the conductive pad. - View Dependent Claims (12, 13, 14, 15)
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16. A method for forming a semiconductor structure, comprising:
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forming a magnetoresistive random access memory (MRAM) device over a first conductive feature, wherein the MRAM device comprises; a first electrode electrically connected to the first conductive feature; a magnetic tunnel junction (MTJ) over the first electrode; a second electrode over the MTJ; and an insulating spacer surrounding sidewalls of the MTJ and the second electrode, wherein the formation of the MRAM device comprises forming a nitride layer over the second electrode before the insulating spacer is formed; forming an insulating layer covering the nitride layer and the MRAM device; polishing the insulating layer and the nitride layer to expose a top surface of the second electrode, thereby forming an oxide layer over the second electrode; removing the oxide layer; and forming a conductive pad over the second electrode; and forming a second conductive feature over and electrically connected to the conductive pad. - View Dependent Claims (17, 18, 19, 20)
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Specification