Group IV metal or semiconductor nanowire fabric
First Claim
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1. A fabric, comprising:
- a self-supporting mass containing a plurality of semiconductor nanowires comprising Ge;
wherein an otherwise identical mass consisting only of the semiconductor nanowires is also self-supporting, wherein the nanowires are coated with a capping agent that passivates the nanowires, wherein the nanowires have an optical absorption ε
N1 at λ
1where λ
1≥
760 nm, wherein Ge has a bulk absorption ε
B1 at λ
1, wherein ε
N1>
ε
B1,wherein the capping agent comprises at least one alkene or thiol ligand, wherein each of said plurality of semiconducting nanowires has an aspect ratio, defined as the ratio of the length of the nanowire to the width of the nanowire, which is greater than 1000, and wherein each of said plurality of semiconducting nanowires has a diameter which is less than 200 nm.
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Abstract
A method is provided for making a fabric. The method comprises (a) providing a composition comprising a plurality of nanocrystals disposed in a liquid medium, the nanocrystals comprising a material elected from the group consisting of a Group IV element; (b) applying the composition to a porous substrate, thereby removing at least a portion of the liquid medium from the nanocrystals; and (c) removing the nanocrystals from the porous substrate as a self-supporting mass.
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Citations
31 Claims
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1. A fabric, comprising:
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a self-supporting mass containing a plurality of semiconductor nanowires comprising Ge; wherein an otherwise identical mass consisting only of the semiconductor nanowires is also self-supporting, wherein the nanowires are coated with a capping agent that passivates the nanowires, wherein the nanowires have an optical absorption ε
N1 at λ
1where λ
1≥
760 nm, wherein Ge has a bulk absorption ε
B1 at λ
1, wherein ε
N1>
ε
B1,wherein the capping agent comprises at least one alkene or thiol ligand, wherein each of said plurality of semiconducting nanowires has an aspect ratio, defined as the ratio of the length of the nanowire to the width of the nanowire, which is greater than 1000, and wherein each of said plurality of semiconducting nanowires has a diameter which is less than 200 nm.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
wherein at least one of said anode and said cathode of said rechargeable battery comprises the fabric of claim 1.
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17. The rechargeable battery of claim 16, wherein said anode comprises said fabric.
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18. The rechargeable battery of claim 16, wherein said rechargeable battery is a lithium ion battery, and wherein said anode comprises said fabric.
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19. The rechargeable battery of claim 16, wherein each of said nanowires contains a shell.
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20. The rechargeable battery of claim 19, wherein each shell comprises an organometallic material.
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21. The fabric of claim 1, wherein said semiconductor nanowires have a diameter of 10-30 nm.
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22. The fabric of claim 1, wherein each of said plurality of semiconducting nanowires has a diameter which is less than 100 nm.
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23. The fabric of claim 1, wherein each of said plurality of semiconducting nanowires has a diameter which is within the range of 10 nm to 90 nm.
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24. A self-supporting mass comprising semiconductor nanowires;
- wherein an otherwise identical mass consisting only of the semiconductor nanowires is also self-supporting, wherein said nanowires comprise Ge, wherein said nanowires are coated with a capping agent, wherein the capping agent has the formula (R)n-X, wherein X is an atom or functional group capable of binding to the surface of the nanowires, wherein each R moiety is independently hydrogen or an alkyl or aryl group having from 1 to 20 carbon atoms, wherein the nanowires have an optical absorption ε
N1 at λ
1, where λ
1≥
760 nm, wherein the material has a bulk absorption ε
B1 at λ
1, and wherein ε
N1>
ε
B1, wherein each of said plurality of semiconducting nanowires has an aspect ratio, defined as the ratio of the length of the nanowire to the width of the nanowire, which is greater than 1000, and wherein each of said plurality of semiconducting nanowires has a diameter which is less than 100 nm. - View Dependent Claims (25, 26, 27)
- wherein an otherwise identical mass consisting only of the semiconductor nanowires is also self-supporting, wherein said nanowires comprise Ge, wherein said nanowires are coated with a capping agent, wherein the capping agent has the formula (R)n-X, wherein X is an atom or functional group capable of binding to the surface of the nanowires, wherein each R moiety is independently hydrogen or an alkyl or aryl group having from 1 to 20 carbon atoms, wherein the nanowires have an optical absorption ε
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28. A fabric, comprising:
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a self-supporting mass containing a plurality of semiconductor nanowires comprising Ge; wherein nanowires are doped with copper, wherein the nanowires are coated with a capping agent that passivates the nanostructures, wherein the nanowires have an optical absorption ε
N1 at λ
1, where λ
1 ≥
760 nm, wherein Ge has a bulk absorption ε
B1 at λ
1, and wherein ε
N1>
ε
B1, and wherein the capping agent comprises at least one alkene or thiol ligand; and
wherein the concentration of copper is at least 0.01% by weight, based on the total weight of the nanowire, wherein each of said plurality of semiconducting nanowires has an aspect ratio, defined as the ratio of the length of the nanowire to the width of the nanowire, which is greater than 1000, and wherein each of said plurality of semiconducting nanowires has a diameter which is less than 100 nm.
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29. A fabric, comprising:
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a self-supporting mass containing a plurality of semiconductor nanowires comprising Si or Ge; wherein an otherwise identical mass consisting only of the semiconductor nanowires is also self-supporting, wherein each of said plurality of semiconducting nanowires has an aspect ratio, defined as the ratio of the length of the nanowire to the width of the nanowire, which is greater than 1000, and said plurality of semiconducting nanowires have an average diameter which is less than 200 nm. - View Dependent Claims (30, 31)
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Specification
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Current AssigneeMerck Patent GmbH (Merck & Co., Inc.)
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Original AssigneePinion Technologies, Inc.
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InventorsKorgel, Brian A., Smith, Damon A., Holmberg, Vincent C., Patel, Reken, Thurk, Paul
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Primary Examiner(s)Vineis, Frank J
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Application NumberUS13/034,667Publication NumberTime in Patent Office2,714 DaysField of Search4292315, 438478, 428220-221, 428364-401, 428903, 977762US Class CurrentCPC Class CodesB82Y 30/00 Nanotechnology for material...B82Y 40/00 Manufacture or treatment of...H01L 29/0665 the shape of the body defin...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H01M 10/0525 Rocking-chair batteries, i....H01M 4/134 Electrodes based on metals,...H01M 4/139 Processes of manufactureH01M 4/1395 of electrodes based on meta...H01M 4/38 of elements or alloysH01M 4/382 Lithium H01M4/405 takes pre...H01M 4/386 Silicon or alloys based on ...H01M 4/405 Alloys based on lithiumY02E 60/10 Energy storage using batteriesY10T 428/249921 Web or sheet containing str...
