Methods and apparatus for processing chamber cleaning end point detection

• US 10,043,641 B2
• Filed: 09/22/2016
• Issued: 08/07/2018
• Est. Priority Date: 09/22/2016
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Choi, Young-Jin, Cho, Su Ho, Park, Beomsoo, Peng, Fei, Choi, Soo Young
• Primary Examiner(s): BOLOGNA, DOMINIC JOSEPH
• Application Number:
  US15/273,631
• Publication Number:
  US 20180082827A1
• Time in Patent Office: 684 Days
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: G01N 21/73 using plasma burners or torches
• CPC Class Codes: G01N 2201/06113 Coherent sources; lasers
• CPC Class Codes: H01J 2237/335 Cleaning
• CPC Class Codes: H01J 37/32853 Hygiene
• CPC Class Codes: H01J 37/32926 Software, data control or modelling
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from the selected area during the cleaning process. The selected area is chosen based on being the expected location of the last cleaning reaction during the cleaning process within the processing chamber (e.g., a corner in a rectangular chamber). Numerous other aspects are provided.

Claims

1. An apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber, the apparatus comprising:

a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and

a zoom lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from a cleaning reaction in the selected area during the cleaning process,

wherein the selected area is chosen based on being an expected location of a last cleaning reaction during the cleaning process within the processing chamber.

2. The apparatus of claim 1 further including a computer operative to execute an application and communicatively coupled to the spectrometer,

wherein the application includes instructions stored in a memory of the computer and adapted to direct the computer to monitor the spectrum measurements of the spectrometer.

3. The apparatus of claim 2 wherein the instructions include further instructions to generate a signal when the spectrum measurements are below a predefined threshold value indicating a cleaning endpoint has been reached.

4. The apparatus of claim 1 wherein the lens system includes multiple lenses operative to magnify the selected area.

5. The apparatus of claim 1 wherein the selected area is in a corner of the processing chamber.

6. The apparatus of claim 5 wherein the selected area is on at least one of a susceptor, a diffuser plate, and a wall of the processing chamber.

7. The apparatus of claim 1 wherein the cleaning process is a plasma cleaning process.

8. A method of detecting a cleaning endpoint of a cleaning process performed within a processing chamber, the method comprising:

performing a cleaning process within a processing chamber;

focusing a zoom lens system on a selected area within the processing chamber via a viewport during the cleaning process;

amplifying an intensity of radiation from a cleaning reaction in the selected area during the cleaning process; and

measuring a spectrum response over time of the cleaning reaction within the processing chamber during the cleaning process using a spectrometer coupled to the lens system,

wherein the selected area is chosen based on being an expected location of a last cleaning reaction during the cleaning process within the processing chamber.

9. The method of claim 8 further including executing instructions stored in a memory of a computer commutatively coupled to the spectrometer and adapted to direct the computer to monitor the spectrum response measured by the spectrometer.

10. The method of claim 9 wherein the instructions include further instructions to generate a signal when the spectrum measurements are below a predefined threshold value indicating a cleaning endpoint has been reached.

11. The method of claim 8 wherein amplifying an intensity of radiation from the cleaning reaction in the selected area includes magnifying the selected area using multiple lenses within the lens system.

12. The method of claim 8 wherein the selected area is in a corner of the processing chamber.

13. The method of claim 8 wherein the selected area is on at least one of a susceptor, a diffuser plate, and a wall of the processing chamber.

14. The method of claim 8 wherein the cleaning process is a plasma cleaning process.

15. A system for processing substrates, the system comprising:

a processing chamber operative to process substrates; and

a cleaning endpoint detection apparatus including a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within the processing chamber during a cleaning process and a zoom lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from a cleaning reaction in the selected area during the cleaning process,

wherein the selected area is chosen based on being an expected location of a last cleaning reaction during the cleaning process within the processing chamber.

16. The system of claim 15 further including a computer operative to execute an application and communicatively coupled to the spectrometer,

wherein the application includes instructions stored in a memory of the computer and adapted to direct the computer to monitor the spectrum measurements of the spectrometer.

17. The system of claim 16 wherein the instructions include further instructions to generate a signal when the spectrum measurements are below a predefined threshold value indicating a cleaning endpoint has been reached.

18. The system of claim 15 wherein the lens system includes multiple lenses operative to magnify the selected area.

19. The system of claim 15 wherein the selected area is in a corner of the processing chamber.

20. The system of claim 15 wherein the selected area is on at least one of a wall, a susceptor, and a diffuser plate of the processing chamber.