Method for protecting layer by forming hydrocarbon-based extremely thin film

• US 10,043,661 B2
• Filed: 09/01/2016
• Issued: 08/07/2018
• Est. Priority Date: 07/13/2015
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Kato, Richika, Nakano, Ryu
• Primary Examiner(s): Dulka, John P
• Application Number:
  US15/254,724
• Publication Number:
  US 20170018420A1
• Time in Patent Office: 705 Days
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02359 treatment to change the surface groups of the insulating layer
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/2254 from or through or into an applied layer, e.g. photoresist, nitrides

Abstract

A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer contacts and covers the target layer and is constituted by a hydrocarbon-based layer; and depositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized. The hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Claims

1. A method for protecting a layer, comprising:

providing a substrate having a target layer;

depositing a protective layer on the target layer, said protective layer contacting and covering the target layer and constituted by a hydrocarbon-based layer, said hydrocarbon-based layer being formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant; and

depositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized.

2. The method according to claim 1, wherein the hydrocarbon-based layer is constituted by a hydrocarbon polymer containing silicon and nitrogen.

3. The method according to claim 1, wherein the target layer is a silicon substrate.

4. The method according to claim 1, wherein the oxide layer is constituted by silicon oxide.

5. The method according to claim 1, wherein the oxide layer is constituted by metal oxide.

6. The method according to claim 1, wherein the alkylaminosilane is selected from the group consisting of bisdimethylaminosilane (BDMAS), hexylethylaminosilane (HEAD), tetraethylaminosilane (TEAS), tert-butylaminosilane (TBAS), bistert-butylaminosilane (BTBAS), bisdimethylaminodimethylaminosilane (BDMADMS), heptamethylsilazane (HMDS), trimethysilyldiethlamine (TMSDEA), trimethylsilyldimethlamine (TMSDMA), trimethyltrivinylcycletrisilazane (TMTVCTS), tristrimetylsilylhydroxyamine (TTMSHA), bisdimethylaminomethylsilane (BDMAMS), and dimethylsilyldimethlamine (DMSDMA).

7. The method according to claim 1, wherein the protective layer consists of the hydrocarbon-based layer.

8. The method according to claim 1, wherein a portion of the protective layer which is oxidized when depositing the oxide layer on the protective layer becomes a part of the oxide layer.

9. The method according to claim 8, wherein the step of depositing the oxide layer continues until substantially the entire protective layer is oxidized.

10. The method according to claim 9, wherein a thickness of the protective layer deposited before depositing the oxide layer is more than zero but less than about 5 nm.

11. The method according to claim 10, wherein a thickness of the oxide layer including the oxidized protective layer is about 1 nm to about 100 nm.

12. The method according to claim 1, wherein the oxide layer is deposited by PEALD.

13. The method according to claim 1, wherein the step of providing the substrate, the step of depositing the protective layer, and the step of depositing the oxide layer are conducted in the same reaction chamber.