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Method to induce strain in finFET channels from an adjacent region

  • US 10,043,805 B2
  • Filed: 06/29/2016
  • Issued: 08/07/2018
  • Est. Priority Date: 09/16/2013
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a substrate;

    a transistor on the substrate, the transistor including;

    a strain-inducing base structure of a first material on the substrate, the strain-inducing base structure having an outer sidewall;

    a fin structure of a second material on the strain-inducing base structure, the first material being different than the second material; and

    a constraining material on the substrate and on the outer sidewall of the strain-inducing base structure, a top surface of the constraining material being below a top surface of the fin structure, an outer surface of the constraining material being spaced apart from the outer sidewall of the strain-inducing base structure.

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