Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching

• US 10,043,851 B1
• Filed: 08/03/2017
• Issued: 08/07/2018
• Est. Priority Date: 08/03/2017
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Shen, Dongna, Wang, Yu-Jen
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US15/668,113
• Time in Patent Office: 369 Days
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall residue and damage is disclosed wherein a pattern is first formed in a hard mask or uppermost MTJ layer. Thereafter, the hard mask sidewall is etch transferred through the remaining MTJ layers with a RIE process comprising main etch and over etch portions, and a cleaning step. The RIE process features noble gas and an oxidant that is one or more of CH₃OH, C₂H₅OH, NH₃, N₂O, H₂O₂, H₂O, O₂, and CO. Noble gas/oxidant flow rate ratio during over etch may be greater than during main etch to avoid chemical damage to MTJ sidewalls. The cleaning step may comprise plasma or ion beam etch with the noble gas and oxidant mixture. Highest values for magnetoresistive ratio and coercivity (Hc) are observed for noble gas/oxidant ratios from 75:25 to 90:10, especially for MTJ nanopillar sizes ≤100 nm.

Claims

1. A method of etching a magnetic tunnel junction (MTJ) stack of layers, comprising:

(a) providing a MTJ stack of layers on a first electrode wherein the MTJ stack of layers includes an uppermost hard mask layer, and a first stack of layers comprising a reference layer, a free layer, and a tunnel barrier layer between the reference layer and free layer;

(b) forming a pattern in the hard mask layer with a first etch process that is an ion beam etch (IBE) or a reactive ion etch (RIE) wherein the pattern has a sidewall that extends from a hard mask top surface to a top surface of the first stack of layers; and

(c) forming a pattern in the first stack of layers with a sidewall that forms continuous surface with the sidewall in the hard mask layer, and that extends to a top surface of the first electrode, wherein the pattern in the first stack of layers is produced by a second etch process, comprising;

(1) a main etch portion performed in a first process chamber wherein a plasma is generated from a gas mixture comprised of a noble gas and one or more oxidants selected from CH₃OH, C₂H₅OH, NH₃, N₂O, H₂O₂, O₂, H₂O, and CO, the gas mixture has a first noble gas content less than 100% and >

0%;

(2) an over etch portion performed in the first process chamber immediately after the main etch portion ends at an end point, and wherein a plasma is generated from a noble gas and one or more of the aforementioned oxidants, and with a second noble gas content less than 100% and >

0%; and

(3) a cleaning step that is an IBE or plasma etch performed in a second process chamber after the over etch portion, wherein a plasma is generated from a gas mixture comprised of a noble gas and one of the aforementioned oxidants in which the noble gas content is greater than 0% and ≤

100%.

2. The method of claim 1 wherein the plasma in the main etch portion is generated in a RIE process chamber with a RF power between 600 Watts and 3000 Watts applied to an upper electrode, and a RF power between 400 Watts and 3000 Watts applied to a lower electrode.

3. The method of claim 1 wherein a gas pressure in the first process chamber is less than or equal 3 mTorr, but is sufficient to sustain a plasma.

4. The method of claim 1 wherein the main etch and over etch portions are performed at a temperature between room temperature and 80°

C.

5. The method of claim 1 wherein the hard mask layer comprises Ta, TaN, Ti, TiN, or W.

6. The method of claim 1 wherein the cleaning step comprises IBE in which ion beams are directed at the sidewall at an angle between 0°

and 90°

with respect to a top surface of the first electrode.

7. The method of claim 1 wherein the etched MTJ stack of layers is formed in a magnetoresistive random access memory (MRAM) or a spin torque transfer (STT)-MRAM device.

8. The method of claim 1 wherein the cleaning step is a plasma etch wherein a plasma is generated with a RF or DC power of less than 100 Watts.

9. The method of claim 1 wherein the second noble gas content is greater than the first noble gas content.

10. The method of claim 1 wherein the first stack of layers further comprises a bottommost seed layer comprised of NiCr, and the end point is determined with Optical Emission Spectroscopy by monitoring a signal intensity at a 521 nm spectral line for chromium.

11. A method of forming a memory device comprised of a plurality of magnetic tunnel junction (MTJ) nanopillars, comprising:

(a) providing a MTJ stack of layers on a first electrode wherein the MTJ stack of layers includes an uppermost hard mask layer, and a first stack of layers comprising a reference layer, a free layer, and a tunnel barrier layer between the reference layer and free layer;

(b) forming a pattern comprised of a plurality of islands in the hard mask layer with a first etch process that is an ion beam etch (IBE) or a reactive ion etch (RIE) wherein each island has a sidewall that extends from a hard mask top surface to a top surface of the first stack of layers;

(c) forming a plurality of MTJ nanopillars in the first stack of layers with a second etch process that extends the sidewall in each hard mask layer island to a top surface of the first electrode, the second etch process, comprises;

(1) a main etch portion performed in a first process chamber wherein a plasma is generated from a gas mixture comprised of a noble gas and one or more oxidants selected from CH₃OH, C₂H₅OH, NH₃, N₂O, H₂O₂, H₂O, O₂, and CO, the gas mixture has a first noble gas content less than 100% and >

0%;

(2) an over etch portion performed in the first process chamber immediately after the main etch portion ends at an end point, and wherein a plasma is generated from a noble gas and one or more of the aforementioned oxidants, and with a second noble gas content less than 100% and >

0%; and

(3) a cleaning step that is a plasma etch or an IBE performed in a second process chamber after the over etch portion, wherein a plasma in the plasma etch or ions in the IBE are generated from a gas mixture comprised of a noble gas and one of the aforementioned oxidants in which the noble gas content is greater than 0% and ≤

100%; and

(d) depositing an encapsulation layer on the MTJ nanopillars and bottom electrode in the second process chamber after the cleaning step, the encapsulation layer is a dielectric layer that fills gaps between adjacent MTJ nanopillars.

12. The method of claim 11 wherein the plasma in the main etch portion is generated in a RIE process chamber with a RF power between 600 Watts and 3000 Watts applied to an upper electrode, and a RF power between 400 Watts and 3000 Watts applied to a lower electrode.

13. The method of claim 11 wherein a gas pressure in the first process chamber is less than or equal to 3 mTorr but is sufficient to sustain a plasma.

14. The method of claim 11 wherein the main etch and over etch portions are performed at a temperature between room temperature and 80°

C.

15. The method of claim 11 wherein the hard mask layer comprises Ta, TaN, Ti, TiN, or W.

16. The method of claim 11 wherein the etched MTJ stack of layers is formed in a magnetoresistive random access memory (MRAM) or a spin torque transfer (STT)-MRAM device.

17. The method of claim 11 wherein the plasma etch in the cleaning step comprises a RF or DC power of less than 100 Watts.

18. The method of claim 11 wherein the second noble gas content is greater than the first noble gas content.

19. The method of claim 11 wherein the cleaning step is the IBE and the ions are directed at an angle between 0°

and 90°

with respect to the first electrode.

20. The method of claim 11 wherein the first stack of layers further comprises a bottommost seed layer comprised of NiCr, and the end point is determined with Optical Emission Spectroscopy by monitoring a signal intensity at a 521 nm spectral line for chromium.