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Semiconductor device and manufacturing method thereof

  • US 10,043,918 B2
  • Filed: 07/10/2017
  • Issued: 08/07/2018
  • Est. Priority Date: 07/08/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film over the gate electrode;

    a first non-single crystal oxide semiconductor layer over and in contact with the gate insulating film, the first non-single crystal oxide semiconductor layer comprising indium and zinc;

    a second non-single crystal oxide semiconductor layer over and in contact with the first non-single crystal oxide semiconductor layer, the second non-single crystal oxide semiconductor layer comprising indium, zinc and gallium;

    a drain electrode layer over and in contact with the second non-single crystal oxide semiconductor layer;

    a source electrode layer over and in contact with the second non-single crystal oxide semiconductor layer; and

    an oxide insulating film over the drain electrode layer and the source electrode layer, wherein the oxide insulating film contacts the second non-single crystal oxide semiconductor layer at least in a region between the drain electrode layer and the source electrode layer,wherein a proportion of gallium with respect to indium in the second non-single crystal oxide semiconductor layer is greater than a proportion of gallium with respect to indium in the first non-single crystal oxide semiconductor layer, andwherein at least an upper portion of the second non-single crystal oxide semiconductor layer comprises a crystal, a c-axis of the crystal being perpendicular to an upper surface of the second non-single crystal oxide semiconductor layer.

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