Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
First Claim
1. A light-emitting diode (LED), comprising:
- a substrate;
a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a distributed Bragg reflector (DBR) disposed on the semiconductor stacked structure;
a first insulating layer disposed on a side surface of the DBR; and
a second insulating layer contacting the side surface of the DBR and disposed between the DBR and the first insulating layer,wherein a hardness of the first insulating layer is greater than a hardness of the second insulating layer.
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Abstract
A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.
40 Citations
19 Claims
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1. A light-emitting diode (LED), comprising:
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a substrate; a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a distributed Bragg reflector (DBR) disposed on the semiconductor stacked structure; a first insulating layer disposed on a side surface of the DBR; and a second insulating layer contacting the side surface of the DBR and disposed between the DBR and the first insulating layer, wherein a hardness of the first insulating layer is greater than a hardness of the second insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light-emitting diode (LED) module, comprising:
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a mount; and an LED disposed on the mount, the LED comprising; a substrate; a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a distributed Bragg reflector (DBR) disposed on the semiconductor stacked structure; a first insulating layer disposed on a side surface of the DBR; and a second insulating layer contacting the side surface of the DBR and disposed between the DBR and the first insulating layer, wherein a hardness of the first insulating layer is greater than a hardness of the second insulating layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification