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Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

  • US 10,043,955 B2
  • Filed: 09/13/2017
  • Issued: 08/07/2018
  • Est. Priority Date: 05/18/2010
  • Status: Active Grant
First Claim
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1. A light-emitting diode (LED), comprising:

  • a substrate;

    a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

    a distributed Bragg reflector (DBR) disposed on the semiconductor stacked structure;

    a first insulating layer disposed on a side surface of the DBR; and

    a second insulating layer contacting the side surface of the DBR and disposed between the DBR and the first insulating layer,wherein a hardness of the first insulating layer is greater than a hardness of the second insulating layer.

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