Self-compensation of stray field of perpendicular magnetic elements

• US 10,043,967 B2
• Filed: 08/07/2014
• Issued: 08/07/2018
• Est. Priority Date: 08/07/2014
• Status: Expired due to Fees

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Chen, Wei-Chuan, Zhu, Xiaochun, Li, Xia, Lu, Yu, Park, Chando, Kang, Seung Hyuk
• Primary Examiner(s): Li, Meiya
• Assistant Examiner(s): Albrecht, Peter M
• Application Number:
  US14/454,509
• Publication Number:
  US 20160043304A1
• Time in Patent Office: 1,461 Days
• Field of Search: 257421
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.

Claims

1. A perpendicular magnetic tunnel junction (pMTJ) device, comprising:

a perpendicular reference layer;

a tunnel barrier layer on a surface of the perpendicular reference layer;

a perpendicular free layer on a surface of the tunnel barrier layer, the perpendicular reference layer and the tunnel barrier layer extending laterally beyond the perpendicular free layer;

a capping layer on a surface of the perpendicular free layer, the perpendicular free layer interposed between the capping layer and the tunnel barrier layer;

a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer and the capping layer;

a permeable material layer supported by a first portion of the dielectric passivation layer and surrounding a second portion of the dielectric passivation layer that surrounds the capping layer, the permeable material layer and the dielectric passivation layer being formed of different materials, the first portion of the dielectric passivation layer interposed directly between the permeable material layer and the tunnel barrier layer, the permeable material layer arranged to be magnetized by the perpendicular reference layer, the magnetized permeable material layer to provide another stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer, an outer sidewall of the permeable material layer being aligned with a sidewall of the dielectric passivation layer and a sidewall of at least one of the perpendicular reference layer and the tunnel barrier layer; and

an electrode directly contacting the dielectric passivation layer, sidewalls of the capping layer, and an inner sidewall of the permeable material layer, the permeable material layer located between the electrode and the first portion of the dielectric passivation layer.

2. The pMTJ device of claim 1, in which the perpendicular reference layer comprises a single layer.

3. The pMTJ device of claim 1, in which the perpendicular reference layer comprises a synthetic antiferromagnetic (SAF) layer.

4. The pMTJ device of claim 1, in which the permeable material layer comprises a Mu-metal material layer, a nickel iron (NiFe)-based material layer, a ferrite material layer, a permalloy material layer, an oxygen doping material layer, or a nitride doping material layer.

5. The pMTJ device of claim 1, in which the dielectric passivation layer comprises silicon nitride (SiN), silicon oxynitride (SiON or SiO_xN_y), aluminum oxide (AlO_x), or silicon oxide (SiO_x).

6. The pMTJ device of claim 1, in which the perpendicular free layer comprises a synthetic antiferromagnetic (SAF) layer, the pMTJ device integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

7. A perpendicular magnetic tunnel junction (pMTJ) device, comprising:

a perpendicular reference layer;

a tunnel barrier layer on a surface of the perpendicular reference layer;

a perpendicular free layer on a surface of the tunnel barrier layer, the perpendicular reference layer and the tunnel barrier layer extending laterally beyond the perpendicular free layer;

a capping layer on a surface of the perpendicular free layer, the perpendicular free layer interposed between the capping layer and the tunnel barrier layer;

a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer and the capping layer;

means for providing a stray field to the perpendicular free layer supported by a first portion of the dielectric passivation layer and surrounding a second portion of the dielectric passivation layer that surrounds the capping layer, the means for providing the stray field and the dielectric passivation layer being formed of different materials, the first portion of the dielectric passivation layer interposed directly between the means for providing the stray field and the tunnel barrier layer, in which the stray field providing means compensates for a stray field from the perpendicular reference layer, an outer sidewall of the means for providing the stray field being aligned with a sidewall of the dielectric passivation layer and a sidewall of at least one of the perpendicular reference layer and the tunnel barrier layer; and

an electrode directly contacting the dielectric passivation layer, sidewalls of the capping layer, and an inner sidewall of the means for providing the stray field, the means for providing the stray field located between the electrode and the first portion of the dielectric passivation layer.

8. The pMTJ device of claim 7, in which the perpendicular reference layer comprises a single layer.

9. The pMTJ device of claim 7, in which the perpendicular reference layer comprises a synthetic antiferromagnetic (SAF) layer.

10. The pMTJ device of claim 7, in which the providing means comprises a Mu-metal material layer, a nickel iron (NiFe)-based material layer, a ferrite material layer, a permalloy material layer, an oxygen doping material layer, or a nitride doping material layer.

11. The pMTJ device of claim 7, in which the dielectric passivation layer comprises silicon nitride (SiN), silicon oxynitride (SiON or SiO_xN_y), aluminum oxide (AlO_x), or silicon oxide (SiO_x).

12. The pMTJ device of claim 7, in which the perpendicular free layer comprises a synthetic antiferromagnetic (SAF) layer, the pMTJ device integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.