Thickness shear mode resonator sensors and methods of forming a plurality of resonator sensors
First Claim
Patent Images
1. An array of resonator sensors, comprising:
- an active wafer array comprising a plurality of unsingulated active wafers, the active wafer array comprises a quartz plate;
a first unsingulated end cap array coupled to a first side of the active wafer array; and
a second unsingulated end cap array coupled to a second side of the active wafer array, wherein each unsingulated active wafer comprises a resonating portion, the resonating portion of each unsingulated active wafer being out of contact with each of the first and second unsingulated end cap arrays, each unsingulated active wafer comprising a continuous quartz structure extending from an outermost portion of the each unsingulated active wafer to the resonating portion on all sides of the resonating portion.
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Abstract
Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.
69 Citations
19 Claims
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1. An array of resonator sensors, comprising:
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an active wafer array comprising a plurality of unsingulated active wafers, the active wafer array comprises a quartz plate; a first unsingulated end cap array coupled to a first side of the active wafer array; and a second unsingulated end cap array coupled to a second side of the active wafer array, wherein each unsingulated active wafer comprises a resonating portion, the resonating portion of each unsingulated active wafer being out of contact with each of the first and second unsingulated end cap arrays, each unsingulated active wafer comprising a continuous quartz structure extending from an outermost portion of the each unsingulated active wafer to the resonating portion on all sides of the resonating portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A thickness shear mode resonator sensor, comprising:
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an active wafer comprising a resonating element positioned at an inner portion of the active wafer, the active wafer singulated from an array of active wafers, the active wafer comprising a continuous structure extending from the resonating element to an outermost portion of the active wafer about all lateral sides of the resonating element; a first end cap coupled to a first side of the active wafer, at least one surface of the active wafer and at least one surface of the first end cap forming a first cavity between the resonating element of the active wafer and the first end cap; and a second end cap coupled to a second, opposing side of the active wafer, at least one surface of the active wafer and at least one surface of the second end cap forming a second cavity between the resonating element of the active wafer and the second end cap, wherein the active wafer exhibits a substantially quadrilateral cross section taken in a direction along an interface of the active wafer and at least one of the first end cap and the second end cap, wherein the first end cap and the second end cap are both coupled to the active wafer with an electrically insulating material, the resonating element of each active wafer being out of contact with each of the first end cap and the second end cap. - View Dependent Claims (10, 11, 12)
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13. A pressure sensor, comprising:
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an active wafer comprising a resonating element positioned at an inner portion of the active wafer, the active wafer singulated from an array of active wafers, the active wafer comprising a continuous structure extending from the resonating element to an outermost portion of the active wafer on all sides of the resonating element; and a housing coupled to the active wafer, wherein at least one of the housing and the active wafer exhibits a square cross section taken in a direction along an interface between the active wafer and the housing, wherein the housing comprises; a first end cap coupled to a first side of the active wafer with an electrically insulative material, at least one surface of the active wafer and at least one surface of the first end cap forming a first cavity between the resonating element of the active wafer and the first end cap; and a second end cap coupled to a second, opposing side of the active wafer with an electrically insulative material, at least one surface of the active wafer and at least one surface of the second end cap forming a second cavity between the resonating element of the active wafer and the second end cap, the resonating element of each active wafer being out of contact with each of the first end cap and the second end cap. - View Dependent Claims (14)
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15. A plurality of resonator sensors, comprising:
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a separated array of active wafers formed in a quartz plate comprising a plurality of simultaneously shaped resonating portions, each resonating portion of the plurality of simultaneously shaped resonating portions comprising a continuous structure extending from the resonating portion at an inner portion of the active wafer to an outermost portion of the resonating portion about all lateral sides of the resonating portion; and at least one housing member coupled to each active wafer of the separated array of active wafers, wherein each resonator sensor of the plurality of resonator sensors exhibits an outer surface with a polygonal cross section, wherein the at least one housing member is coupled to each active wafer, the resonating portion of each of the separated array of active wafers being out of contact with the at least one housing member. - View Dependent Claims (16, 17, 18, 19)
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Specification