Quantum dot color filter substrate and manufacturing method thereof

• US 10,048,412 B2
• Filed: 12/28/2015
• Issued: 08/14/2018
• Est. Priority Date: 11/13/2015
• Status: Active Grant

• Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Original Assignee: Sehnzhen China Star Optoelectronics Technology Company Limited
• Inventors: Li, Dongze
• Primary Examiner(s): McPherson, John A
• Application Number:
  US14/915,890
• Publication Number:
  US 20170254933A1
• Time in Patent Office: 960 Days
• Field of Search: 430 7, 349106
• CPC Class Codes: G02B 5/20 Filters polarising elements G02B5/30
• CPC Class Codes: G02B 5/201 in the form of arrays
• CPC Class Codes: G02B 5/206 comprising particles embedded in a solid matrix
• CPC Class Codes: G02B 5/223 containing organic substances, e.g. dyes, inks or pigments
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133614 using photoluminescence, e.g. phosphors illuminated by UV or blue light
• CPC Class Codes: G02F 1/133617 Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
• CPC Class Codes: G02F 1/133621 providing coloured light G02F1/133617, G02F1/133533 take precedence
• CPC Class Codes: G02F 2202/36 Micro- or nanomaterials
• CPC Class Codes: G03F 7/0007 Filters, e.g. additive colour filters; Components for display devices
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses high power UV light irradiation on the QD material in the QD gel for prolonged period of time to perform selective quenching to obtain a selectively quenched QD layer, i.e., patterning the QD layer without etching process, achieve simplifying the QD CF substrate manufacturing process and reduce production cost. The QD CF substrate uses selectively quenched QD layer obtain by UV light irradiation technology to achieve improve the color gamut of display as well as simplifying manufacturing process. Moreover, the QD layer comprises no blue QD material, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency as well as reduce material cost.

Claims

1. A manufacturing method for quantum dot (QD) color filter (CF) substrate, which comprises:

Step 1;

providing a substrate, the substrate comprising;

red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;

Step 2;

forming a patterned red color-resist layer and a green color-resist layer, and an organic transparent color-resist layer respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas of the substrate to obtain a CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer;

Step 3;

coating a layer of QD gel on the CF substrate, and curing the QD gel;

the QD gel being a heat-curing gel comprising therein a red QD material and a green QD material; and

Step 4;

providing a mask, the mask comprising an opaque portion corresponding to the red and green sub-pixel areas, and a transparent portion corresponding to the blue sub-pixel areas;

using ultraviolet (UV) light to perform irradiation on the portion of the mask corresponding to blue sub-pixel areas for 3-40 hours, so that the irreversible fluorescence quenching occurring for the QD material in the QD gel located on the blue sub-pixel areas under long time UV light irradiation, and the QD material in the QD gel located on red sub-pixel areas and green sub-pixel areas not affected by the UV light due to shielding from the mask, thus, obtaining a selectively quenched QD layer;

so as to obtain a QD CF film comprising the substrate, the CF film, and the QD layer;

the QD layer comprising;

a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;

the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light; and

the QD material in the second QD layer not emitting light when excited.

2. The manufacturing method for QD CF substrate as claimed in claim 1, wherein in Step 3, the coating thickness of the QD gel on the CF layer is 0.5-20 um.

3. The manufacturing method for QD CF substrate as claimed in claim 1, wherein the QD material in the QD gel is one or more of the II-VI group QD material and I-III-VI group QD material.

4. The manufacturing method for QD CF substrate as claimed in claim 3, wherein the QD material in the QD gel is one or more of ZnCdSe₂, CdSe, CdTe, CuInS₂, and ZnCuInS₃.

5. The manufacturing method for QD CF substrate as claimed in claim 1, wherein the QD CF substrate is used to a display using blue backlight.

6. A quantum dot (QD) color filter (CF) substrate, which comprises:

a substrate, a CF layer disposed on the substrate, and a QD layer disposed on the CF layer;

the substrate comprising;

red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;

the CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer disposed respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;

the QD layer comprising;

a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;

the QD layer being formed by QD gel, and the QD gel being obtained by mixing and curing a gel with a red QD material and a green QD material;

the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light;

irreversible fluorescence quenching occurring for the QD material in the second QD layer under long time UV light irradiation for 3-40 hours, and the QD material in the second QD layer not emitting light when excited;

the QD CF substrate being used to a display using blue backlight.

7. The QD CF substrate as claimed in claim 6, wherein the display is an liquid crystal display (LCD), an organic light-emitting diode (OLED) display, or a quantum dot light-emitting diode (QLED) display.

8. The QD CF substrate as claimed in claim 6, wherein the thickness of the QD layer is 0.5-20 um.

9. The QD CF substrate as claimed in claim 6, wherein the QD material in the QD gel is one or more of the II-VI group QD material I-III-VI and group QD material.

10. The QD CF substrate as claimed in claim 9, wherein the QD material in the QD gel is one or more of ZnCdSe₂, CdSe, CdTe, CuInS₂, and ZnCuInS₃.

11. A quantum dot (QD) color filter (CF) substrate, which comprises:

a substrate, a CF layer disposed on the substrate, and a QD layer disposed on the CF layer;

the substrate comprising;

red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;

the CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer disposed respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;

the QD layer comprising;

a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;

the QD layer being formed by QD gel, and the QD gel being obtained by mixing and curing a gel with a red QD material and a green QD material;

the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light;

irreversible fluorescence quenching occurring for the QD material in the second QD layer under long time UV light irradiation for 3-40 hours, and the QD material in the second QD layer not emitting light when excited;

the QD CF substrate being used to a display using blue backlight;

wherein the display is an liquid crystal display (LCD), an organic light-emitting diode (OLED) display, or a quantum dot light-emitting diode (QLED) display;

wherein the thickness of the QD layer is 0.5-20 um;

wherein the QD material in the QD gel is one or more of the II-VI group QD material and I-III-VI group QD material;

wherein the QD material in the QD gel is one or more of ZnCdSe₂, CdSe, CdTe, CuInS₂, and ZnCuInS₃.