Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD
First Claim
1. A method for fabricating a semiconductor device, the method comprising:
- forming a structure with a height difference on a substrate; and
forming a dielectric layer structure on the structure with the height difference using an atomic layer deposition (ALD) method,whereinforming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference, wherein forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor into a chamber including the substrate to form a silicon precursor layer having an atomic layer thickness on the structure with the height difference, and feeding a second gas including nitrogen into a chamber including the substrate, such that the second gas reacts with the silicon precursor layer to form a silicon nitride layer having an atomic layer thickness on the structure with the height difference.
5 Assignments
0 Petitions
Accused Products
Abstract
A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.
-
Citations
20 Claims
-
1. A method for fabricating a semiconductor device, the method comprising:
-
forming a structure with a height difference on a substrate; and forming a dielectric layer structure on the structure with the height difference using an atomic layer deposition (ALD) method, wherein forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference, wherein forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor into a chamber including the substrate to form a silicon precursor layer having an atomic layer thickness on the structure with the height difference, and feeding a second gas including nitrogen into a chamber including the substrate, such that the second gas reacts with the silicon precursor layer to form a silicon nitride layer having an atomic layer thickness on the structure with the height difference. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method for fabricating a semiconductor device, the method comprising:
-
forming a structure on a substrate; and forming a silicon nitride layer on the structure inside a chamber using an atomic layer deposition (ALD) method, wherein forming the silicon nitride layer includes feeding a first gas including one of pentachlorodisilane (PCDS) and diisopropylaminopentachlorodisilane (DPDC) as a silicon precursor into the chamber to form a silicon precursor layer having an atomic layer thickness on the structure, purging an unreacted portion of the first gas by feeding a first purge gas into the chamber, feeding a second gas including nitrogen into the chamber such that the second gas reacts with the silicon precursor layer to form a silicon nitride film having an atomic layer thickness on the structure, and purging an unreacted portion of the second gas by feeding a second purge gas into the chamber. - View Dependent Claims (11, 12, 13, 14, 15)
-
-
16. A method of forming a dielectric layer on a target object by atomic layer deposition, the target object containing at least one structural feature having a sidewall, the method comprising:
-
feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) into a chamber including the target object to form a silicon precursor layer having an atomic layer thickness on the target object; feeding a first purge gas into the chamber to purge an unreacted portion of the first gas from the chamber; feeding a second gas into the chamber, the second gas including nitrogen, such that the second gas reacts with the silicon precursor layer to form a silicon nitride layer having an atomic layer thickness on the target object; feeding a second purge gas into the chamber to purge an unreacted portion of the second gas from the chamber; and repeating feeding the first gas, feeding the first purge gas, feeding the second gas and feeding the second purge gas to form the dielectric layer to include a silicon nitride layer having greater than an atomic layer thickness. - View Dependent Claims (17, 18, 19, 20)
-
Specification