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Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

  • US 10,049,882 B1
  • Filed: 01/25/2017
  • Issued: 08/14/2018
  • Est. Priority Date: 01/25/2017
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • forming a structure with a height difference on a substrate; and

    forming a dielectric layer structure on the structure with the height difference using an atomic layer deposition (ALD) method,whereinforming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference, wherein forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor into a chamber including the substrate to form a silicon precursor layer having an atomic layer thickness on the structure with the height difference, and feeding a second gas including nitrogen into a chamber including the substrate, such that the second gas reacts with the silicon precursor layer to form a silicon nitride layer having an atomic layer thickness on the structure with the height difference.

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