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FDSOI channel control by implanted high-K buried oxide

  • US 10,049,917 B2
  • Filed: 09/19/2016
  • Issued: 08/14/2018
  • Est. Priority Date: 09/19/2016
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a silicon (Si) substrate having a buried oxide (BOX) layer formed over the substrate and a silicon-on-insulator (SOI) layer formed over the BOX layer;

    implanting a high current of dopants into at least one portion of the BOX layer;

    performing a high-temperature anneal of the BOX layer;

    forming first and second fully depleted silicon-on-insulator (FDSOI) transistors on the SOI layer, wherein the BOX layer below the first FDSOI transistors is either implanted with a first dopant, forming a high-k layer, or is non-implanted, and the BOX layer below the second FDSOI transistors is implanted with a second dopant, forming a high-k layer, the first and second dopants being different; and

    applying a single voltage across a backside of the Si substrate,wherein the second dopant comprises hafnium (Hf), zirconium (Zr), titanium (Ti), or tantalum (Ta).

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