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Method of making semiconductor structure having contact plug

  • US 10,049,929 B2
  • Filed: 01/28/2016
  • Issued: 08/14/2018
  • Est. Priority Date: 12/05/2012
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure having at least a contact plug, comprising:

  • providing a substrate;

    forming a transistor on the substrate, wherein the transistor comprises a gate and a source/drain region;

    forming a dielectric layer on the substrate, wherein the transistor is disposed in the dielectric layer;

    forming a first inter-layer dielectric (ILD) layer on the dielectric layer and the transistor, wherein a bottom surface of the first ILD is leveled with a top surface of the gate;

    forming a first contact plug in the first ILD layer to electrically connect the source/drain region, wherein a top surface of the first contact plug is higher than a top surface of the gate, and wherein the top surface of the first contact plug is level with a top surface of the first ILD layer;

    forming a second ILD layer on the first ILD layer; and

    forming a second contact plug in the second ILD layer to electrically connect the first contact plug, and a third contact plug in the first ILD layer and the second ILD layer to electrically connect the gate, wherein a portion of the first ILD layer contacts the top surface of the gate between the first contact plug and the third contact plug, and wherein the first ILD layer is a single layer structure.

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