Method of making semiconductor structure having contact plug
First Claim
1. A method of forming a semiconductor structure having at least a contact plug, comprising:
- providing a substrate;
forming a transistor on the substrate, wherein the transistor comprises a gate and a source/drain region;
forming a dielectric layer on the substrate, wherein the transistor is disposed in the dielectric layer;
forming a first inter-layer dielectric (ILD) layer on the dielectric layer and the transistor, wherein a bottom surface of the first ILD is leveled with a top surface of the gate;
forming a first contact plug in the first ILD layer to electrically connect the source/drain region, wherein a top surface of the first contact plug is higher than a top surface of the gate, and wherein the top surface of the first contact plug is level with a top surface of the first ILD layer;
forming a second ILD layer on the first ILD layer; and
forming a second contact plug in the second ILD layer to electrically connect the first contact plug, and a third contact plug in the first ILD layer and the second ILD layer to electrically connect the gate, wherein a portion of the first ILD layer contacts the top surface of the gate between the first contact plug and the third contact plug, and wherein the first ILD layer is a single layer structure.
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Abstract
The present invention provides a method of forming a semiconductor structure including a substrate, a transistor, a first ILD layer, a second ILD layer, a first contact plug, second contact plug and a third contact plug. The transistor is disposed on the substrate and includes a gate and a source/drain region. The first ILD layer is disposed on the transistor. The first contact plug is disposed in the first ILD layer and a top surface of the first contact plug is higher than a top surface of the gate. The second ILD layer is disposed on the first ILD layer. The second contact plug is disposed in the second ILD layer and electrically connected to the first contact plug. The third contact plug is disposed in the first ILD layer and the second ILD layer and electrically connected to the gate.
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Citations
12 Claims
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1. A method of forming a semiconductor structure having at least a contact plug, comprising:
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providing a substrate;
forming a transistor on the substrate, wherein the transistor comprises a gate and a source/drain region;forming a dielectric layer on the substrate, wherein the transistor is disposed in the dielectric layer; forming a first inter-layer dielectric (ILD) layer on the dielectric layer and the transistor, wherein a bottom surface of the first ILD is leveled with a top surface of the gate; forming a first contact plug in the first ILD layer to electrically connect the source/drain region, wherein a top surface of the first contact plug is higher than a top surface of the gate, and wherein the top surface of the first contact plug is level with a top surface of the first ILD layer; forming a second ILD layer on the first ILD layer; and forming a second contact plug in the second ILD layer to electrically connect the first contact plug, and a third contact plug in the first ILD layer and the second ILD layer to electrically connect the gate, wherein a portion of the first ILD layer contacts the top surface of the gate between the first contact plug and the third contact plug, and wherein the first ILD layer is a single layer structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification