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Method of manufacturing a semiconductor device including through silicon plugs

  • US 10,049,931 B2
  • Filed: 03/14/2016
  • Issued: 08/14/2018
  • Est. Priority Date: 04/05/2010
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, the method comprising:

  • forming a first opening, a second opening, and a third opening in a first surface of a substrate, wherein a first region of the substrate having the first surface interposes the first and second openings and a second region of the substrate interposes the second and third openings;

    forming a conductive material in the first opening and in the second opening and over the first surface in the first region of the substrate and forming the conductive material in the third opening while a photoresist feature is disposed on the second region;

    reducing a thickness of the substrate from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening, the conductive material in the second opening, and the conductive material in the third opening; and

    connecting a light emitting diode (LED) device to a metal pad on the third surface of the substrate.

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