Method of manufacturing a semiconductor device including through silicon plugs
First Claim
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1. A method of making a semiconductor device, the method comprising:
- forming a first opening, a second opening, and a third opening in a first surface of a substrate, wherein a first region of the substrate having the first surface interposes the first and second openings and a second region of the substrate interposes the second and third openings;
forming a conductive material in the first opening and in the second opening and over the first surface in the first region of the substrate and forming the conductive material in the third opening while a photoresist feature is disposed on the second region;
reducing a thickness of the substrate from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening, the conductive material in the second opening, and the conductive material in the third opening; and
connecting a light emitting diode (LED) device to a metal pad on the third surface of the substrate.
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Abstract
A method of making a semiconductor device is provided including forming a first opening and a second opening in a first surface of a substrate. A conductive material is formed in the first opening and in the second opening and over the first surface in the first region of the substrate between the openings. A thickness of the substrate may be reduced from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening and the conductive material in the second opening. A light emitting diode (LED) device is connected to the third surface of the substrate.
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Citations
20 Claims
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1. A method of making a semiconductor device, the method comprising:
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forming a first opening, a second opening, and a third opening in a first surface of a substrate, wherein a first region of the substrate having the first surface interposes the first and second openings and a second region of the substrate interposes the second and third openings; forming a conductive material in the first opening and in the second opening and over the first surface in the first region of the substrate and forming the conductive material in the third opening while a photoresist feature is disposed on the second region; reducing a thickness of the substrate from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening, the conductive material in the second opening, and the conductive material in the third opening; and connecting a light emitting diode (LED) device to a metal pad on the third surface of the substrate.
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2. A method of making a semiconductor device, the method comprising:
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providing a substrate having a first surface and a second surface opposing the first surface; etching the first surface of a substrate to form a first opening and a second opening and a third opening; forming a first patterned photoresist layer over the first surface of the substrate, wherein a first feature of the first patterned photoresist layer is disposed on the first surface between a first opening and the third opening; forming a conductive material in the first opening, the second opening, and the third opening, wherein each of the first, second, and third openings having conductive material with a first end adjacent the first surface of the substrate and a second end opposing end, wherein the first end of the conductive material in the first opening is connected to the first end of the conductive material in the second opening by a portion of the conductive material that is disposed on the first surface of the substrate and wherein the first feature interposes the first end of the conductive material in the first opening and the first end of the conductive material in the third opening; removing the first feature to form a space over the first surface of the substrate; forming a first metal pad over the second surface of the substrate, wherein the first metal pad is electrically connected to the conductive material in the first opening and the conductive material in the second opening; and bonding a device to the first metal pad. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of making a semiconductor device, the method comprising:
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providing a substrate having a first surface and an opposing second surface; etching the first surface of a substrate to form a first opening, a second opening and a third opening, wherein the first opening interposes the second and third openings; forming a first photoresist feature over the first surface between a first opening and the third opening; forming a conductive material in the first opening, the second opening, and the third opening, wherein each of the first, second, and third openings having conductive material with a first end adjacent the first surface of the substrate and a second end opposing end, wherein the first end of the conductive material in the first opening is connected to the first end of the conductive material in the second opening by a portion of the conductive material that is disposed on the first surface of the substrate and wherein the first photoresist feature interposes the first end of the conductive material in the first opening and the first end of the conductive material in the third opening, the conductive material in the third opening being electrically isolated from the conductive material in the first opening; forming a first metal pad over the second surface of the substrate, wherein the first metal pad is electrically connected to the conductive material in the first opening and the conductive material in the second opening; forming a second metal pad over the second surface of the substrate; and bonding an light emitted diode device to the first metal pad. - View Dependent Claims (18, 19, 20)
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Specification