Conductive connections, structures with such connections, and methods of manufacture

• US 10,049,998 B2
• Filed: 07/27/2016
• Issued: 08/14/2018
• Est. Priority Date: 05/12/2014
• Status: Active Grant

• Current Assignee: Invensas Corporation
• Original Assignee: Invensas Corporation
• Inventors: Katkar, Rajesh, Uzoh, Cyprian Emeka
• Primary Examiner(s): Dulka, John P
• Application Number:
  US15/221,370
• Publication Number:
  US 20160336286A1
• Time in Patent Office: 748 Days
• CPC Class Codes: B23K 1/0016 Brazing of electronic components
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 3/0623 for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
• CPC Class Codes: B23K 35/0244 Powders, particles or spheres; Preforms made therefrom
• CPC Class Codes: B23K 35/0266 flux-cored
• CPC Class Codes: H01L 21/02225 characterised by the process for the formation of the insulating layer
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/03318 by dispensing droplets
• CPC Class Codes: H01L 2224/0332 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/0333 in solid form
• CPC Class Codes: H01L 2224/0391 Forming a passivation layer after forming the bonding area
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/051 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/056 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/06102 : the bonding areas being at different heights
• CPC Class Codes: H01L 2224/10145 : Flow barriers
• CPC Class Codes: H01L 2224/11001 : Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/11005 : for aligning the bump connector, e.g. marks, spacers
• CPC Class Codes: H01L 2224/11009 : for protecting parts during manufacture
• CPC Class Codes: H01L 2224/111 : Manufacture and pre-treatment of the bump connector preform
• CPC Class Codes: H01L 2224/11318 : by dispensing droplets
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/1134 : Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/11901 : with repetition of the same manufacturing step
• CPC Class Codes: H01L 2224/1191 : Forming a passivation layer after forming the bump connector
• CPC Class Codes: H01L 2224/13005 : Structure
• CPC Class Codes: H01L 2224/13017 : being non uniform along the bump connector
• CPC Class Codes: H01L 2224/13018 : comprising protrusions or indentations
• CPC Class Codes: H01L 2224/13021 : the bump connector being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13078 : being disposed next to each other, e.g. side-to-side arrangements
• CPC Class Codes: H01L 2224/1308 : being stacked
• CPC Class Codes: H01L 2224/13082 : Two-layer arrangements
• CPC Class Codes: H01L 2224/13084 : Four-layer arrangements
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/1319 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/13561 : On the entire surface of the core, i.e. integral coating
• CPC Class Codes: H01L 2224/13562 : On the entire exposed surface of the core
• CPC Class Codes: H01L 2224/136 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/1405 : Shape
• CPC Class Codes: H01L 2224/16058 : being non uniform along the bump connector
• CPC Class Codes: H01L 2224/16059 : comprising protrusions or indentations
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16147 : the bump connector connecting to a bonding area disposed in a recess of the surface
• CPC Class Codes: H01L 2224/16148 : the bump connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16238 : the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/1701 : Structure
• CPC Class Codes: H01L 2224/1703 : Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/17181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/17505 : Bump connectors having different materials
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/73104 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/75253 : adapted for localised heating
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81138 : the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/81141 : Guiding structures both on and outside the body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/8121 : using a reflow oven
• CPC Class Codes: H01L 2224/8122 : with energy being in the form of electromagnetic radiation
• CPC Class Codes: H01L 2224/81224 : using a laser
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/81825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/9211 : Parallel connecting processes
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3135 : Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/742 : Apparatus for manufacturing bump connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/98 : Methods for disconnecting semiconductor or solid-state bodies
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15321 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 2924/381 : Pitch distance
• CPC Class Codes: H01L 2924/3841 : Solder bridging
• CPC Class Codes: H05K 1/115 : Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 1/144 : Stacked arrangements of planar printed circuit boards
• CPC Class Codes: H05K 2201/09572 : Solder filled plated through-hole in the final product soldering lead-in-hole components H05K3/3447
• CPC Class Codes: H05K 3/341 : Surface mounted components

Abstract

In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion of a solder ball'"'"'s surface is melted when the connection is formed on one structure and/or when the connection is being attached to another structure. In some embodiments, non-solder balls are joined by an intermediate solder ball (140i). A solder connection may be surrounded by a solder locking layer (1210) and may be recessed in a hole (1230) in that layer. Other features are also provided.

Claims

1. A structure comprising circuitry comprising a semiconductor integrated circuit, the circuitry comprising a conductive connecting feature which has a first end and a second end, the connecting feature extending along a first line from the first end to the second end, wherein at each point of the first line, the connecting feature has a transversal cross-sectional area which is an area of a transversal cross section which is the connecting feature'"'"'s cross section perpendicular to the first line at said point;

wherein the connecting feature comprises a first segment, a second segment physically contacting the first segment, and a third segment physically contacting the second segment, wherein surfaces of the first, second and third segments have the same melting temperature;

wherein the first segment has a first end and a second end which is located at a junction with the second segment;

wherein the third segment has a first end which is located at a junction with the second segment, and the third segment has a second end;

wherein the transversal cross-sectional area;

decreases from the first end of the first segment to the junction of the first and second segments;

increases from the junction of the first and second segments to a position in the second segment;

decreases from said position in the second segment to a junction of the second and third segments; and

increases from the junction of the second and third segments to the second end of the third segment;

wherein at least one of the following is true;

(1) the length of the second segment is at most 50% of the length of each of the first and third segments;

(2) the volume of the second segment is at most 50% of the volume of each of the first and third segments.

2. The structure of claim 1 wherein a diameter of the transversal cross section:

decreases from the first end of the first segment to the junction of the first and second segments;

increases from the junction of the first and second segments to a position in the second segment;

decreases from said position in the second segment to a junction of the second and third segments; and

increases from the junction of the second and third segments to the second end of the third segment.

3. The structure of claim 1 wherein in any view in which the second end of the connecting feature lies directly above the first end of the connecting feature, a width of the transversal cross section:

decreases from the first end of the first segment to the junction of the first and second segments;

increases from the junction of the first and second segments to a position in the second segment;

decreases from said position in the second segment to a junction of the second and third segments; and

increases from the junction of the second and third segments to the second end of the third segment.

4. The structure of claim 1 wherein the first end of the connecting feature is attached to a contact pad of a semiconductor integrated circuit or of a substrate attachable to the semiconductor integrated circuit.

5. The structure of claim 4, further comprising a dielectric layer comprising a top surface and a through-hole in the top surface, at least part of the connecting feature being in the through-hole and comprising solder and physically contacting the dielectric layer in the through-hole, the connecting feature being recessed in the through-hole at the top surface of the dielectric layer.

6. The manufacture of claim 5 wherein the through-hole has a concave sidewall at the top surface of the dielectric layer.

7. The manufacture of claim 5 wherein the connecting feature is attached to a conductive post of a second structure, the conductive post being partially located in a top portion of the through-hole.

8. The structure of claim 1 wherein (1) is true.

9. The structure of claim 1 wherein the length of the second segment is at most 2% of the length of each of the first and third segments.

10. The structure of claim 1 wherein (2) is true.

11. A structure comprising circuitry comprising a semiconductor integrated circuit, the circuitry comprising a conductive connecting feature which has a first end and a second end, the connecting feature extending along a first line from the first end to the second end, wherein at each point of the first line, the connecting feature has a transversal cross section which is the connecting feature'"'"'s cross section perpendicular to the first line at said point;

wherein the connecting feature comprises a first segment, a second segment physically contacting the first segment, and a third segment physically contacting the second segment, wherein surfaces of the first, second and third segments have the same melting temperature;

wherein the first segment has a first end and a second end which is located at a junction with the second segment;

wherein the third segment has a first end which is located at a junction with the second segment, and the third segment has a second end;

wherein a diameter of the transversal cross section;

decreases from the first end of the first segment to the junction of the first and second segments;

increases from the junction of the first and second segments to a position in the second segment;

decreases from said position in the second segment to a junction of the second and third segments; and

increases from the junction of the second and third segments to the second end of the third segment;

wherein at least one of the following is true;

(1) the length of the second segment is at most 50% of the length of each of the first and third segments;

(2) the volume of the second segment is at most 50% of the volume of each of the first and third segments.

12. The structure of claim 11 wherein in any view in which the second end of the connecting feature lies directly above the first end of the connecting feature, a width of the transversal cross section:

decreases from the first end of the first segment to the junction of the first and second segments;

increases from the junction of the first and second segments to a position in the second segment;

decreases from said position in the second segment to a junction of the second and third segments; and

increases from the junction of the second and third segments to the second end of the third segment.

13. The structure of claim 11 wherein the first end of the connecting feature is attached to a contact pad of a semiconductor integrated circuit or of a substrate attachable to the semiconductor integrated circuit.

14. The structure of claim 11 wherein (1) is true.

15. The structure of claim 11 wherein the length of the second segment is at most 2% of the length of each of the first and third segments.

16. The structure of claim 11 wherein (2) is true.

17. A structure comprising circuitry comprising a semiconductor integrated circuit, the circuitry comprising a conductive connecting feature which has a first end and a second end, the connecting feature extending along a first line from the first end to the second end, wherein at each point of the first line, the connecting feature has a transversal cross section which is the connecting feature'"'"'s cross section perpendicular to the first line at said point;

wherein the connecting feature comprises a first segment, a second segment physically contacting the first segment, and a third segment physically contacting the second segment, wherein surfaces of the first, second and third segments have the same melting temperature;

wherein the first segment has a first end and a second end which is located at a junction with the second segment;

wherein the third segment has a first end which is located at a junction with the second segment, and the third segment has a second end;

wherein in any view in which the second end of the connecting feature lies directly above the first end of the connecting feature, a width of the transversal cross section;

decreases from the first end of the first segment to the junction of the first and second segments;

increases from the junction of the first and second segments to a position in the second segment;

decreases from said position in the second segment to a junction of the second and third segments; and

increases from the junction of the second and third segments to the second end of the third segment;

wherein at least one of the following is true;

(1) the length of the second segment is at most 50% of the length of each of the first and third segments;

(2) the volume of the second segment is at most 50% of the volume of each of the first and third segments.

18. The structure of claim 17 wherein (1) is true.

19. The structure of claim 17 wherein the length of the second segment is at most 2% of the length of each of the first and third segments.

20. The structure of claim 17 wherein (2) is true.