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Thin film transistor substrate and method for manufacturing the same

  • US 10,050,059 B2
  • Filed: 09/01/2016
  • Issued: 08/14/2018
  • Est. Priority Date: 07/07/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a thin film transistor substrate including a plurality of pixels arranged in matrix, said method comprising the steps of:

  • (a) selectively forming a gate electrode and a common electrode on a substrate;

    (b) forming a gate insulating film to cover said gate electrode and said common electrode;

    (c) selectively forming a transparent oxide film on said gate insulating film; and

    (d) forming a source electrode and a drain electrode spaced from each other on said transparent oxide film, forming a light transmissive pixel electrode electrically connected to said drain electrode, and oxidizing a portion of said transparent oxide film corresponding to a lower layer in a region between said source electrode and said drain electrode to form a semiconductor region that serves as a channel region of a thin film transistor, wherein said step (d) includes the step of forming said source electrode, said drain electrode, and said pixel electrode using a plurality of resist patterns that are formed in one photolithography process and include a complex resist pattern having a plurality of different film thicknesses, said complex resist pattern has a pattern in which a film thickness in a portion where said source electrode and said drain electrode are formed is larger than a film thickness in a portion where said pixel electrode is formed, and wherein said step (d) includes a step of performing ashing with O2 gas plasma on said plurality of resist patterns to reduce the film thickness of said plurality of resist patterns, and oxidizing the portion of said transparent oxide film corresponding to the lower layer in the region between said source electrode and said drain electrode to form said semiconductor region.

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