Semiconductor device and electronic device

• US 10,050,060 B2
• Filed: 05/10/2017
• Issued: 08/14/2018
• Est. Priority Date: 03/19/2015
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyairi, Hidekazu, Sato, Yuichi, Asano, Yuji, Maruyama, Tetsunori, Onuki, Tatsuya, Nagatsuka, Shuhei
• Primary Examiner(s): Harrison, Monica D
• Application Number:
  US15/591,145
• Publication Number:
  US 20170243899A1
• Time in Patent Office: 461 Days
• Field of Search: 257 43
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53257 the principal metal being a refractory metal
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/16 : including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/45 : Ohmic electrodes
• CPC Class Codes: H01L 29/78 : with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

Claims

1. A semiconductor device comprising:

a first transistor including silicon;

a first insulator over the first transistor, the first insulator including silicon;

a second insulator over the first insulator, the second insulator including aluminum oxide;

a plug embedded in the first insulator and the second insulator;

a wiring over the plug; and

a second transistor including an oxide semiconductor over the wiring,

wherein the first transistor and the second transistor are electrically connected to each other through the wiring and the plug, and

wherein the wiring includes at least one of a tantalum nitride layer, a tantalum layer, and a titanium nitride layer.

2. The semiconductor device according to claim 1,

wherein the wiring has a structure in which the tantalum nitride layer and the tantalum layer are stacked or the titanium nitride layer and the tantalum layer are stacked.

3. The semiconductor device according to claim 1,

wherein the plug has a structure in which a second tantalum nitride layer and a second tantalum layer are stacked or a second titanium nitride layer and a third tantalum layer are stacked.

4. The semiconductor device according to claim 1,

wherein the first insulator includes at least one of silicon oxide, silicon oxynitride, silicon nitride oxide, and silicon nitride.

5. The semiconductor device according to claim 1,

wherein the first insulator is in direct contact with the second insulator.

6. A semiconductor device comprising:

a first transistor including silicon;

a first insulator over the first transistor, the first insulator including silicon;

a second insulator over the first insulator, the second insulator including aluminum oxide;

a plug embedded in the first insulator and the second insulator;

a wiring over the plug; and

a second transistor including an oxide semiconductor over the wiring,

wherein the first transistor and the second transistor are electrically connected to each other through the wiring and the plug, and wherein the plug includes at least one of a tantalum nitride layer, a tantalum layer, and a titanium nitride layer.

7. The semiconductor device according to claim 6,

wherein the wiring has a structure in which a second tantalum nitride layer and a second tantalum layer are stacked or a second titanium nitride layer and a third tantalum layer are stacked.

8. The semiconductor device according to claim 6,

wherein the plug has a structure in which the tantalum nitride layer and the tantalum layer are stacked or the titanium nitride layer and the tantalum layer are stacked.

9. The semiconductor device according to claim 6,

wherein the first insulator includes at least one of silicon oxide, silicon oxynitride, silicon nitride oxide, and silicon nitride.

10. The semiconductor device according to claim 6,

wherein the first insulator is in direct contact with the second insulator.

11. A semiconductor device comprising:

a first transistor including silicon;

a first insulator over the first transistor, the first insulator including silicon;

a second insulator on and in contact with the first insulator, the second insulator including aluminum oxide;

a plug embedded in the first insulator and the second insulator;

a conductor over the plug; and

a second transistor including an oxide semiconductor over the conductor,

wherein the first transistor and the second transistor are electrically connected to each other through the conductor and the plug.

12. The semiconductor device according to claim 11,

wherein the conductor has a structure in which a tantalum nitride layer and a tantalum layer are stacked or a titanium nitride layer and a tantalum layer are stacked.

13. The semiconductor device according to claim 11,

wherein the plug has a structure in which a tantalum nitride layer and a tantalum layer are stacked or a titanium nitride layer and a tantalum layer are stacked.

14. The semiconductor device according to claim 11,

wherein the first insulator includes at least one of silicon oxide, silicon oxynitride, silicon nitride oxide, and silicon nitride.