Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
First Claim
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1. A semiconductor device, comprising:
- needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area; and
a grid structure separating the transistor sections from each other, the grid structure comprising;
stripe-shaped gate edge portions extending along one edge of the transistor sections, respectively;
gate node portions wider than the gate edge portions and connecting two or more of the gate edge portions, respectively; and
one or more connection sections of the semiconductor portion, wherein the one or more connection sections extend between neighboring transistor sections.
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Abstract
A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area. A grid structure separates the transistor sections from each other. The grid structure includes: stripe-shaped gate edge portions extending along one edge of the transistor sections, respectively; gate node portions wider than the gate edge portions and connecting two or more of the gate edge portions, respectively; and one or more connection sections of the semiconductor portion, wherein the one or more connection sections extend between neighboring transistor sections.
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Citations
21 Claims
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1. A semiconductor device, comprising:
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needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area; and a grid structure separating the transistor sections from each other, the grid structure comprising; stripe-shaped gate edge portions extending along one edge of the transistor sections, respectively; gate node portions wider than the gate edge portions and connecting two or more of the gate edge portions, respectively; and one or more connection sections of the semiconductor portion, wherein the one or more connection sections extend between neighboring transistor sections. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. An electronic assembly, comprising:
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a semiconductor device comprising; needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area; and a grid structure separating the transistor sections from each other, the grid structure comprising; stripe-shaped gate edge portions extending along one edge of the transistor sections, respectively; gate node portions wider than the gate edge portions and connecting two or more of the gate edge portions, respectively; and one or more connection sections of the semiconductor portion, wherein the one or more connection sections extend between neighboring transistor sections.
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Specification