Fabrication of a strained region on a substrate
First Claim
1. A method of forming a strained channel for a field effect transistor, comprising:
- forming at least one etching trench by removing at least a portion of a stressor layer, a channel layer, and a sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, wherein a stress is applied to each channel block by the associated stressor island; and
removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch.
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Accused Products
Abstract
A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.
12 Citations
20 Claims
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1. A method of forming a strained channel for a field effect transistor, comprising:
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forming at least one etching trench by removing at least a portion of a stressor layer, a channel layer, and a sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, wherein a stress is applied to each channel block by the associated stressor island; and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a strained channel, comprising:
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forming at least one etching trench by removing at least a portion of a silicon nitride stressor layer, a single crystal silicon channel layer, and a single crystal silicon-germanium sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the single crystal silicon-germanium sacrificial layer, and separates the silicon nitride stressor layer, the single crystal silicon channel layer, and the single crystal silicon-germanium sacrificial layer into two or more silicon nitride stressor islands, single crystal silicon channel blocks, and single crystal silicon-germanium sacrificial slabs, wherein each single crystal silicon channel block has a tensile or compressive stress imparted by the associated silicon nitride stressor island; and removing the single crystal silicon-germanium sacrificial slabs to release the single crystal silicon channel blocks from the substrate using a selective etch. - View Dependent Claims (12, 13, 14, 15)
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16. An intermediate channel structure, comprising;
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a substrate with a single crystal surface; one or more pillars, where each of the one or more pillars supports a channel block; and a stressor island on each channel block, wherein the stressor island applies a stress to a top surface of the channel block, and wherein each channel block has a width in the range of about 250 nm to about 10 μ
m, and a length in the range of about 2 μ
m to about 100 μ
m. - View Dependent Claims (17, 18, 19, 20)
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Specification