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Method for manufacturing semiconductor device

  • US 10,050,153 B2
  • Filed: 09/14/2017
  • Issued: 08/14/2018
  • Est. Priority Date: 01/21/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode over a substrate;

    a gate insulating film over the gate electrode;

    an oxide semiconductor film over the gate insulating film, the oxide semiconductor film including In, M, and Zn, wherein M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf;

    a pair of electrodes over the oxide semiconductor film, the pair of electrodes including copper; and

    an oxide film between the oxide semiconductor film and the pair of electrodes, the oxide film including In, M, and Zn,wherein the oxide semiconductor film includes a region serving as a channel region,wherein the oxide film has a non-single-crystal structure and includes a c-axis aligned crystal,wherein a proportion of M atoms in the oxide film is higher than a proportion of M atoms in the oxide semiconductor film, andwherein an atomic ratio of metal element in the oxide film satisfies M>

    In and Zn >

    M.

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