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Method of manufacturing light emitting device

  • US 10,050,182 B2
  • Filed: 12/21/2017
  • Issued: 08/14/2018
  • Est. Priority Date: 12/08/2015
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a light emitting element including;

    a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, in this order, each containing a nitride semiconductor,a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, andan n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode,wherein the light emitting element has a peak wavelength of 410 nm or less; and

    a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer,wherein the protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal,wherein the first metal oxide film includes one or more individual first metal oxide film layers, andthe second metal oxide film includes one or more individual second metal oxide film layers.

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