Photonic integration platform

• US 10,054,745 B2
• Filed: 03/17/2017
• Issued: 08/21/2018
• Est. Priority Date: 07/03/2013
• Status: Active Grant

• Current Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Original Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Inventors: Webster, Mark, Tummidi, Ravi Sekhar
• Primary Examiner(s): Kianni, Kaveh C
• Application Number:
  US15/461,789
• Publication Number:
  US 20170192174A1
• Time in Patent Office: 522 Days
• Field of Search: 385 14
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/121 Channel; buried or the like
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 2006/12152 Mode converter
• CPC Class Codes: G02B 6/107 Subwavelength-diameter waveguides, e.g. nanowires
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/14 Mode converters
• CPC Class Codes: G02B 6/30 for use between fibre and thin-film device
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections

Abstract

A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Claims

1. A SOI optical device, comprising:

a first prong disposed on a first layer; and

a plurality of second prongs in a stacked relationship with the first prong and disposed on a plurality of layers that excludes the first layer, wherein the first prong and the plurality of second prongs are configured to at least one of receive and transmit optical energy via a coupling surface of the optical device, wherein each of the plurality of second prongs is surrounded by an insulative material different from a material of the first prong,

wherein a dimension of the first prong changes as the first prong extends away from the coupling surface,

wherein a length of the first prong in the direction that extends away from the coupling surface is greater than each of the respective lengths of the plurality of second prongs.

2. The SOI optical device of claim 1, further comprising:

a semiconductor substrate;

an insulation layer disposed above the substrate; and

a crystalline silicon layer disposed above the insulation layer, wherein the first prong and the second prongs are disposed at least one of in and above the crystalline silicon layer.

3. The SOI optical device of claim 2, wherein the first prong and the second prongs are disposed above the crystalline silicon layer, and wherein the silicon layer comprises a silicon waveguide that overlaps at least one of the first prong and the second prongs such that the optical energy transmitted by the first prong and the plurality of second prongs is transferred to the silicon waveguide.

4. The SOI optical device of claim 2, wherein the first prong is located between the insulation layer and at least one of the plurality of second prongs.

5. The SOI optical device of claim 4, wherein the first prong is located between the silicon layer and all of the plurality of second prongs.

6. The SOI optical device of claim 1, wherein the plurality of second prongs terminates at one of:

(i) the coupling surface and (ii) a plane recessed from and parallel to the coupling surface.

7. A SOI optical device, comprising:

a first waveguide disposed on a first layer; and

a plurality of second waveguides in a stacked relationship with the first waveguide and disposed on a plurality of layers that excludes the first layer, wherein the first waveguide and the plurality of second waveguides are configured to at least one of receive and transmit optical energy via a coupling surface of the optical device, wherein each of the plurality of second waveguides is surrounded by an insulative material different from a material of the first waveguide,

wherein a dimension of the first waveguide changes as the first waveguide extends away from the coupling surface,

wherein a length of the first waveguide in the direction that extends away from the coupling surface is greater than each of the respective lengths of the plurality of second waveguides.

8. The SOI optical device of claim 7, further comprising:

a semiconductor substrate;

an insulation layer disposed above the substrate; and

a crystalline silicon layer disposed above the insulation layer, wherein the first waveguide and the second waveguides are disposed at least one of in and above the crystalline silicon layer.

9. The SOI optical device of claim 8, wherein the first waveguide and the second waveguides are disposed above the crystalline silicon layer, and wherein the silicon layer comprises a silicon waveguide that overlaps at least one of the first waveguide and the second waveguides such that the optical energy transmitted by the first waveguide and the plurality of second waveguides is transferred to the silicon waveguide.

10. The SOI optical device of claim 8, wherein the first waveguide is located between the insulation layer and at least one of the plurality of second waveguides.

11. The SOI optical device of claim 10, wherein the first waveguide is located between the silicon layer and all of the plurality of second waveguides.

12. The SOI optical device of claim 7, wherein the plurality of second waveguides terminates at one of:

(i) the coupling surface and (ii) a plane recessed from and parallel to the coupling surface.