Surface-emitting laser, surface-emitting laser array, laser device, ignitor, internal combustion engine, optical scanner, image forming apparatus, light transmission module, and light emission system
First Claim
1. A surface-emitting laser comprising:
- an active layer;
a spacer layer disposed on the active layer; and
a reflection mirror disposed on the spacer layer, the reflection mirror including a current constriction layer that is a selectively-oxidized layer made of Al(Ga)As,the current constriction layer disposed at a position of a node of a standing-wave of an electric field of light oscillated at the active layer and disposed away from an interface between the spacer layer and the reflection mirror by an optical distance of one-fourth of an oscillation wavelength at the active layer,the reflection mirror including at least one AlGaInP layer that is in direct contact with the selectively-oxidized layer made of Al(Ga)As.
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Accused Products
Abstract
A surface-emitting laser includes an active layer on which a spacer layer is disposed, and a reflection mirror disposed on the spacer layer, including a current constriction layer that is a selectively-oxidized layer having been selectively oxidized. The current constriction layer is disposed at a position of a node of a standing-wave of an electric field of light oscillated at the active layer and is disposed away from an interface between the spacer layer and the reflection mirror by an optical distance of one-fourth of an oscillation wavelength at the active layer. The selectively-oxidized layer is made of AlGaAs. The reflection mirror includes at least one AlGaInP layer contacting the selectively-oxidized layer.
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Citations
20 Claims
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1. A surface-emitting laser comprising:
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an active layer; a spacer layer disposed on the active layer; and a reflection mirror disposed on the spacer layer, the reflection mirror including a current constriction layer that is a selectively-oxidized layer made of Al(Ga)As, the current constriction layer disposed at a position of a node of a standing-wave of an electric field of light oscillated at the active layer and disposed away from an interface between the spacer layer and the reflection mirror by an optical distance of one-fourth of an oscillation wavelength at the active layer, the reflection mirror including at least one AlGaInP layer that is in direct contact with the selectively-oxidized layer made of Al(Ga)As. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification