Atomic layer deposition of antimony oxide films
First Claim
1. A vapor deposition process for depositing an antimony oxide thin film, comprising alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase antimony source and a vapor phase oxygen source, wherein the antimony source has an oxidation state of +III or +V.
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Abstract
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
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20 Claims
- 1. A vapor deposition process for depositing an antimony oxide thin film, comprising alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase antimony source and a vapor phase oxygen source, wherein the antimony source has an oxidation state of +III or +V.
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11. An atomic layer deposition (ALD) process for depositing an antimony oxide thin film on a substrate in a reaction space, the process comprising:
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contacting the substrate with a vapor phase antimony precursor comprising an antimony halide such that an antimony compound adsorbs to the substrate, wherein the antimony halide has an oxidation state of +III or +V; and contacting the substrate with an oxygen source to thereby convert the adsorbed antimony compound into antimony oxide. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification