Enhanced channel strain to reduce contact resistance in NMOS FET devices
First Claim
1. A semiconductor device, comprising:
- a substrate;
a first fin structure;
a second fin structure;
an isolation layer formed on the substrate, the isolation layer formed adjacent to the first fin structure and the second fin structure;
a first gate structure formed on at least a portion of the first fin structure and the isolation layer;
a second gate structure formed on at least a portion of the second fin structure and the isolation layer;
a first epitaxial layer including a first strained material that provides stress to a channel region of the first fin structure; and
a second epitaxial layer including a second strained material that provides stress to a channel region of the second fin structure, the second epitaxial layer having a first region and a second region, the first region being located closer to a surface of the second epitaxial layer than the second region, the first region having a first doping concentration of a first doping agent and the second region having a second doping concentration of a second doping agent, the first doping concentration being greater than the second doping concentration,wherein the first doping agent has a first lateral variance and the second doping agent has a second lateral variance, and wherein the first lateral variance is greater than the second lateral variance.
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Accused Products
Abstract
A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.
21 Citations
20 Claims
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1. A semiconductor device, comprising:
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a substrate; a first fin structure; a second fin structure; an isolation layer formed on the substrate, the isolation layer formed adjacent to the first fin structure and the second fin structure; a first gate structure formed on at least a portion of the first fin structure and the isolation layer; a second gate structure formed on at least a portion of the second fin structure and the isolation layer; a first epitaxial layer including a first strained material that provides stress to a channel region of the first fin structure; and a second epitaxial layer including a second strained material that provides stress to a channel region of the second fin structure, the second epitaxial layer having a first region and a second region, the first region being located closer to a surface of the second epitaxial layer than the second region, the first region having a first doping concentration of a first doping agent and the second region having a second doping concentration of a second doping agent, the first doping concentration being greater than the second doping concentration, wherein the first doping agent has a first lateral variance and the second doping agent has a second lateral variance, and wherein the first lateral variance is greater than the second lateral variance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A fin field-effect transistor (Fin FET) semiconductor device, comprising:
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a substrate; a first fin structure having a channel region; a second fin structure having a channel region; a first epitaxial layer including a first strained material that provides stress to the channel region of the first fin structure; and a second epitaxial layer including a second strained material that provides stress to the channel region of the second fin structure, wherein the second epitaxial layer has a first region and a second region, the first region being located closer to a surface of the second epitaxial layer than the second region, the first region has a first doping concentration of a first dopant in a range from 1×
1021 atoms/cm3 to 1×
1022 atoms/cm3 and the second region has a second doping concentration of a second dopant in a range from 1×
1015 atoms/cm3 to 4×
1015 atoms/cm3wherein the first dopant has a first lateral variance and the second dopant has a second lateral variance, and wherein the first lateral variance is greater than the second lateral variance. - View Dependent Claims (12, 13, 14, 15)
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16. A fin field-effect transistor (Fin FET) semiconductor device, comprising:
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a substrate; a first fin structure having a channel region; a second fin structure having a channel region; a first epitaxial layer including a first strained material that provides stress to the channel region of the first fin structure; and a second epitaxial layer including a second strained material that provides stress to the channel region of the second fin structure, wherein the second epitaxial layer has a first region and a second region, the first region being located closer to a surface of the second epitaxial layer than the second region, the first region has a first doping concentration of a first dopant and the second region has a second doping concentration of a second dopant, the first dopant in the first region has a first lateral variance and the second dopant in the second region has a second lateral variance, wherein the first lateral variance is greater than the second lateral variance. - View Dependent Claims (17, 18, 19, 20)
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Specification