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Consumption of the channel of a transistor by sacrificial oxidation

  • US 10,056,470 B2
  • Filed: 01/18/2017
  • Issued: 08/21/2018
  • Est. Priority Date: 01/19/2016
  • Status: Active Grant
First Claim
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1. A method for manufacturing a transistor,the transistor comprising:

  • a gate disposed above an underlying layer of a semiconductor material, the gate comprising at least one first flank and at least one second flank, anda gate foot disposed under the gate in the underlying layer and protruding relative to a peripheral portion of the underlying layer, the peripheral portion surrounding the gate foot; and

    the method comprising;

    forming a selectivity layer obtained from an original layer and disposed only above the peripheral portion of the underlying layer, the selectivity layer being obtained by at least;

    transforming at least a portion of a material of the original layer according to a thickness dimension of the original layer and starting from an exposed surface of the original layer so as to form a portion of transformed material configured to not expose the gate foot, andpartially removing at least one portion of the portion of transformed material so as to retain a layer of transformed material forming the selectivity layer above the peripheral portion and so as to expose at least partially the gate foot; and

    selective etching, with respect to the selectivity layer, of the material of the original layer so as to etch the gate foot.

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