Electrical circuit odometer sensor array
First Claim
Patent Images
1. An on-chip sensor system, comprising:
- an integrated circuit chip comprising a plurality of sensor groups located on respective functional blocks of the integrated circuit chip, wherein output of the sensor groups correlates to actual wear of the integrated circuit chip based on an actual operational environment of the integrated circuit chip, the plurality of sensor groups including;
a first sensor group on a first functional block of the integrated circuit chip comprising first sensor structures that are configured to detect a measure of different amounts of wear based on a first failure mechanism; and
a second sensor group on a second functional block of the integrated circuit chip comprising second sensor structures that are configured to detect a measure of different amounts of wear based on a second failure mechanism different from the first failure mechanism.
7 Assignments
0 Petitions
Accused Products
Abstract
Approaches for detecting wear in integrated circuit chips are provided. An on-chip sensor system includes an integrated circuit chip including a plurality of sensor groups. Each respective one of the sensor groups is structured and arranged to detect a measure of wear corresponding to a respective one of a plurality of failure mechanisms.
-
Citations
20 Claims
-
1. An on-chip sensor system, comprising:
an integrated circuit chip comprising a plurality of sensor groups located on respective functional blocks of the integrated circuit chip, wherein output of the sensor groups correlates to actual wear of the integrated circuit chip based on an actual operational environment of the integrated circuit chip, the plurality of sensor groups including; a first sensor group on a first functional block of the integrated circuit chip comprising first sensor structures that are configured to detect a measure of different amounts of wear based on a first failure mechanism; and a second sensor group on a second functional block of the integrated circuit chip comprising second sensor structures that are configured to detect a measure of different amounts of wear based on a second failure mechanism different from the first failure mechanism. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
15. A semiconductor device, comprising:
-
a first group of graduated sensor structures that are configured to fail sequentially at different levels of exposure to a first failure mechanism, the first group of graduated sensor structures on a first location in a die portion of an integrated circuit chip, a second group of graduated sensor structures that are configured to fail sequentially at different levels of exposure to the first failure mechanism, the second group of graduated sensor structures on a second location in the die portion of the integrated circuit chip, a third group of graduated sensor structures that are configured to fail sequentially at different levels of exposure to a second failure mechanism different from the first failure mechanism, the third group of graduated sensor structures on a third location in the die portion of the integrated circuit chip; and a fourth group of graduated sensor structures that are configured to fail sequentially at different levels of exposure to the second failure mechanism, the fourth group of graduated sensor structures on a fourth location in the die portion of the integrated circuit chip, wherein output of the first sensor group, the second sensor group, the third sensor group and the fourth sensor group correlates to an amount of actual wear the integrated circuit chip has experienced based on an actual operational environment of the integrated circuit chip. - View Dependent Claims (16, 17)
-
-
18. A method of determining an amount of wear on a semiconductor device, comprising:
-
detecting failure of a first sensor structure in a group of graduated sensor structures that are structured and arranged to fail sequentially due to exposure to a first failure mechanism, wherein the sensor structures are formed on a first functional block in the semiconductor device; correlating the failure of the first sensor structure to an amount of actual wear experienced by the semiconductor device based on the first failure mechanism of an actual operational environment of the integrated circuit chip; detecting failure of a second sensor structure in a group of graduated sensor structures that are structured and arranged to fail sequentially due to exposure to a second failure mechanism, wherein the sensor structures are formed on a second functional block in the semiconductor device; and correlating the failure of the second sensor structure to an amount of actual wear experienced by the semiconductor device based on the second failure mechanism of the actual operational environment of the integrated circuit chip. - View Dependent Claims (19, 20)
-
Specification