Selective SiN lateral recess
First Claim
1. An etching method comprising:
- flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber;
forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor;
flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide; and
laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide, wherein the semiconductor processing chamber is maintained at a temperature less than −
20°
C., wherein a layer of silicon nitride at an upper region of the trench and a layer of silicon nitride at a lower region of the trench differ in lateral etch amounts by less than about 30%, and wherein the layers of silicon nitride are laterally etched less than 10 nm from the sidewalls of the trench.
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Abstract
Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.
1674 Citations
18 Claims
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1. An etching method comprising:
- flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber;
forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor;
flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide; and
laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide, wherein the semiconductor processing chamber is maintained at a temperature less than −
20°
C., wherein a layer of silicon nitride at an upper region of the trench and a layer of silicon nitride at a lower region of the trench differ in lateral etch amounts by less than about 30%, and wherein the layers of silicon nitride are laterally etched less than 10 nm from the sidewalls of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber;
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12. An etching method comprising:
- flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber;
forming a plasma within the remote plasma region to generate primary plasma effluents of the fluorine-containing and oxygen-containing precursors;
flowing the primary plasma effluents into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide;
maintaining the semiconductor processing chamber at a temperature less than −
20°
C.;
oxidizing a portion of the silicon nitride from sidewalls of the trench to produce a fluorinated oxide region in each layer of silicon nitride;
flowing a fluorine-containing precursor into the remote plasma region of the semiconductor processing chamber while generating a plasma to produce secondary plasma effluents;
flowing the secondary plasma effluents into the processing region of the semiconductor processing chamber; and
laterally etching the fluorinated oxide region from each layer of silicon nitride, wherein a layer of silicon nitride at an upper region of the trench and a layer of silicon nitride at a lower region of the trench differ in lateral etch amounts by less than about 30%. - View Dependent Claims (13, 14, 15, 16, 17, 18)
- flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber;
Specification