Semiconductor device with inductively coupled coils

• US 10,062,642 B2
• Filed: 06/07/2017
• Issued: 08/28/2018
• Est. Priority Date: 01/29/2014
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Igarashi, Takayuki, Funaya, Takuo
• Primary Examiner(s): Parker, Allen
• Assistant Examiner(s): Muse, Ismail
• Application Number:
  US15/616,151
• Publication Number:
  US 20170317024A1
• Time in Patent Office: 447 Days
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/49503 characterised by the die pad
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 23/53214 the principal metal being aluminium
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1203 : the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]

Abstract

Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL1 and a wiring M2 formed on an interlayer insulator IL2, a wiring M3 formed on an interlayer insulator IL3, and a coil CL2 and a wiring M4 formed on the interlayer insulator IL4. Moreover, a distance DM4 between the coil CL2 and the wiring M4 is longer than a distance DM3 between the coil CL2 and the wiring M3 (DM4>DM3). Furthermore, the distance DM3 between the coil CL2 and the wiring M3 is set to be longer than a sum of a film thickness of the interlayer insulator IL3 and a film thickness of the interlayer insulator IL4, which are positioned between the coil CL1 and the coil CL2. In this manner, it is possible to improve an insulation withstand voltage between the coil CL2 and the wiring M4 or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region 1A and a seal ring formation region 1C surrounding a peripheral circuit formation region 1B are formed so as to improve the moisture resistance.

Claims

1. A semiconductor device comprising:

a substrate having a main surface and a rear surface opposite the main surface;

a first insulating film formed on the main surface of the substrate;

a first coil and a first wiring formed on the first insulating film;

a second insulating film formed on the first coil and the first wiring;

a second wiring formed on the second insulating film;

a third insulating film formed on the second wiring;

a groove formed in the third insulating film and separating the third insulating film in a first portion of the third insulating film and a second portion of the third insulating film in a plan view;

a second coil formed on the first portion of the third insulating film; and

a third wiring formed on the second portion of the third insulating film and in the groove,

wherein the first coil is overlapped with the second coil in a cross section view,

wherein the first and second coils are not overlapped with the first, second, and third wirings,

wherein the groove surrounds the first and second coils in the plan view,

wherein the groove overlaps with the second wiring in the cross section view, and

wherein the third wiring is connected to the second wiring in the groove in the cross section view.

2. The semiconductor device according to claim 1,

wherein the second wiring surrounds the first and second coils in the plan view.

3. The semiconductor device according to claim 2,

the first wiring is overlapped with the second wiring in the cross section view, and

wherein the first wiring is connected to the second wiring via a plug which is formed in the second insulating film in the cross section view.

4. The semiconductor device according to claim 3,

wherein the first wiring surrounds the first and second coils in the plan view.

5. The semiconductor device according to claim 4,

wherein the second wiring separates the third insulating film in a first portion of the third insulating film and a second portion of the third insulating film in the cross section view.

6. The semiconductor device according to claim 1,

wherein a thickness of the second wiring is greater than a thickness of the first wiring in a thickness direction of the substrate in the cross section view.

7. The semiconductor device according to claim 6,

wherein a thickness of the third wiring is greater than the thickness of the first wiring in the thickness direction of the substrate in the cross section view.

8. The semiconductor device according to claim 7,

wherein a thickness of the third insulating film is greater than a thickness of the second insulating film in the thickness direction of the substrate in the cross section view, and

wherein a depth of the groove is greater than the thickness of the second wiring in the thickness direction of the substrate in the cross section view.

9. The semiconductor device according to claim 1,

wherein each of the second insulating film and the third insulating film is formed of an inorganic insulating film.

10. A semiconductor device comprising:

a first semiconductor chip mounted on a first die pad;

a second semiconductor chip mounted side by side with the first semiconductor chip on a second die pad;

a plurality of leads arranged outside the first and the second die pads;

the plurality of leads including a plurality of first leads which are arranged closer to the first semiconductor chip than the second semiconductor chip, and a plurality of second leads which are arranged closer to the second semiconductor chip than the first semiconductor chip and which are arranged opposite to the first leads;

a plurality of bonding wires including a plurality of first wires which connect the first leads and the first semiconductor chip, a plurality of second wires which connect the second leads and the second semiconductor chip, and a plurality of third wires which connect the first and the second semiconductor chips; and

a resin sealing the first and the second semiconductor chips, the first and the second die pads, the bonding wires, and a portion of each of the leads,

wherein the first die pad is not electrically connected with the second die pad,

wherein the first semiconductor chip comprises;

a substrate having a main surface and a rear surface opposite the main surface;

a first insulating film formed on the main surface of the substrate;

a first coil and a first wiring formed on the first insulating film;

a second insulating film formed on the first coil and the first wiring;

a second wiring formed on the second insulating film;

a third insulating film formed on the second wiring;

a groove formed in the third insulating film and separating the third insulating film in a first portion of the third insulating film and a second portion of the third insulating film in a plan view;

a second coil formed on the first portion of the third insulating film; and

a third wiring formed on the second portion of the third insulating film and in the groove,

wherein the first coil is overlapped with the second coil in a cross section view,

wherein the first and second coils are not overlapped with the first, second, and third wirings,

wherein the groove surrounds the first and second coils in the plan view,

wherein the groove overlaps with the second wiring in the cross section view, and

wherein the third wiring is connected to the second wiring in the groove in the cross section view.

11. The semiconductor device according to claim 10,

wherein the second wiring surrounds the first and second coils in the plan view.

12. The semiconductor device according to claim 11,

wherein the first wiring is overlapped with the second wiring in the cross section view, and

wherein the first wiring is connected to the second wiring via a plug which is formed in the second insulating film in the cross section view.

13. The semiconductor device according to claim 12,

wherein the first wiring surrounds the first and second coils in the plan view.

14. The semiconductor device according to claim 13,

wherein the second wiring separates the third insulating film in a first portion of the third insulating film and a second portion of the third insulating film in the cross section view.

15. The semiconductor device according to claim 10,

wherein a thickness of the second wiring is greater than a thickness of the first wiring in a thickness direction of the substrate in the cross section view.

16. The semiconductor device according to claim 15,

wherein a thickness of the third wiring is greater than the thickness of the first wiring in the thickness direction of the substrate in the cross section view.

17. The semiconductor device according to claim 16,

wherein a thickness of the third insulating film is greater than a thickness of the second insulating film in the thickness direction of the substrate in the cross section view, and

wherein a depth of the groove is greater than the thickness of the second wiring in the thickness direction of the substrate in the cross section view.

18. The semiconductor device according to claim 10,

wherein each of the second insulating film and the third insulating film is formed of an inorganic insulating film.