Devices and methods for fully depleted silicon-on-insulator back biasing
First Claim
1. An integrated circuit, comprising:
- a first well of a first conductivity type formed in a substrate;
a second well of a second conductivity type, opposite the first conductivity type, formed in the substrate, immediately adjacent the first well;
an insulating layer over the first well and the second well;
a first device having;
a first gate over a first channel region having the first conductivity type and formed over the second well,a first implant rail region formed in the second well extending across the first device and having the first conductivity type, anda first threshold voltage (Vt) adjusting implant extension region having the first conductivity type and extending from the first implant rail region under an entirety of the first channel region, wherein the first implant rail region and first Vt adjusting implant extension region are contiguous, and the first channel region is over the insulating layer and the insulating layer is over the first implant rail region and first Vt adjusting implant extension region;
a second device having;
a second gate over a second channel region having the first conductivity type and formed over the second well,a second implant rail region formed in the second well extending across the second device and having the first conductivity type, anda second threshold voltage (Vt) adjusting implant extension region having the first conductivity type and extending from the second implant rail region under an entirety of the second channel region, wherein the second implant rail region and second Vt adjusting implant extension region are contiguous, and the second channel region is over the insulating layer and the insulating layer is over the second implant rail region and second Vt adjusting implant extension region;
wherein the first and second implant rail regions are contiguous and correspond to portions of a same implant rail of the integrated circuit.
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Accused Products
Abstract
An integrated circuit includes a first device having a first threshold voltage (Vt) adjusting implant extension region having a first conductivity type and extending from a first implant rail region under an entirety of a first channel region. The first implant rail region and first Vt adjusting implant extension region are contiguous, and the first channel region is over an insulating layer and the insulating layer is over the first implant rail region and first Vt adjusting implant extension region. A second device has a second Vt adjusting implant extension region having the first conductivity type and extending from a second implant rail region under an entirety of a second channel region. The second implant rail region and second Vt adjusting implant extension region are contiguous, and the second channel region is over the insulating layer and the insulating layer is over the second implant rail region and second Vt adjusting implant extension region.
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Citations
20 Claims
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1. An integrated circuit, comprising:
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a first well of a first conductivity type formed in a substrate; a second well of a second conductivity type, opposite the first conductivity type, formed in the substrate, immediately adjacent the first well; an insulating layer over the first well and the second well; a first device having; a first gate over a first channel region having the first conductivity type and formed over the second well, a first implant rail region formed in the second well extending across the first device and having the first conductivity type, and a first threshold voltage (Vt) adjusting implant extension region having the first conductivity type and extending from the first implant rail region under an entirety of the first channel region, wherein the first implant rail region and first Vt adjusting implant extension region are contiguous, and the first channel region is over the insulating layer and the insulating layer is over the first implant rail region and first Vt adjusting implant extension region; a second device having; a second gate over a second channel region having the first conductivity type and formed over the second well, a second implant rail region formed in the second well extending across the second device and having the first conductivity type, and a second threshold voltage (Vt) adjusting implant extension region having the first conductivity type and extending from the second implant rail region under an entirety of the second channel region, wherein the second implant rail region and second Vt adjusting implant extension region are contiguous, and the second channel region is over the insulating layer and the insulating layer is over the second implant rail region and second Vt adjusting implant extension region; wherein the first and second implant rail regions are contiguous and correspond to portions of a same implant rail of the integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An integrated circuit, comprising:
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a first well of a first conductivity type formed in a substrate; a second well of a second conductivity type, opposite the first conductivity type, formed in the substrate, immediately adjacent the first well; an insulating layer over the first well and the second well; a first device having; a first gate over a first channel region having the first conductivity type and formed over the second well, a first implant rail region formed in the second well extending across the first device and having the first conductivity type, and a first threshold voltage (Vt) adjusting implant extension region having the first conductivity type and extending from the first implant rail region under an entirety of the first channel region, wherein the first implant rail region and first Vt adjusting implant extension region are contiguous, and the first channel region is over the insulating layer and the insulating layer is over the first implant rail region and first Vt adjusting implant extension region; a second device having; a second gate over a second channel region having the second conductivity type and formed over the first well, a second implant rail region formed in the first well extending across the second device and having the second conductivity type, and a second threshold voltage (Vt) adjusting implant extension region having the second conductivity type and extending from the second implant rail region under an entirety of the second channel region, wherein the second implant rail region and second Vt adjusting implant extension region are contiguous, and the second channel region is over the insulating layer and the insulating layer is over the second implant rail region and second Vt adjusting implant extension region; wherein the first and second devices are immediately adjacent devices and the first well and the second well between the first and second devices are immediately adjacent. - View Dependent Claims (15, 16, 17)
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18. An integrated circuit, comprising:
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a first well of a first conductivity type formed in a substrate; a second well of a second conductivity type, opposite the first conductivity type, formed in the substrate, immediately adjacent the first well; an insulating layer over the first well and the second well; a first device characterized as a low threshold voltage device, wherein the first device includes; a first gate over a first channel region having the first conductivity type and formed over the second well, a first implant rail region formed in the second well extending across a first border of the first device and having the first conductivity type, and a first threshold voltage (Vt) adjusting implant extension region having the first conductivity type and extending from the first implant rail region under an entirety of the first channel region, wherein the first implant rail region and first Vt adjusting implant extension region are contiguous, and the first channel region is over the insulating layer and the insulating layer is over the first implant rail region and first Vt adjusting implant extension region; a second device immediately adjacent a first side of the first device, wherein the second device is characterized as a regular threshold voltage device, wherein the first device has a lower threshold voltage than the second device, and the second device comprises; a second gate over a second channel region having the first conductivity type and formed over the second well, a second implant rail region formed in the second well extending across a first border of the second device and having the first conductivity type, wherein a region of the second well that is directly under the entirety of the second channel region is devoid of implant regions having the first conductivity type, and the second implant rail region is electrically isolated from the second gate and the second channel region, wherein the first and second implant rail regions are contiguous and correspond to portions of a first implant rail of the integrated circuit. - View Dependent Claims (19, 20)
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Specification