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Trench gate trench field plate vertical MOSFET

  • US 10,062,777 B2
  • Filed: 04/12/2017
  • Issued: 08/28/2018
  • Est. Priority Date: 10/03/2013
  • Status: Active Grant
First Claim
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1. A vertical drain extended transistor formed in a semiconductor substrate, comprising:

  • a first trench structure comprising;

    a first trench;

    a first insulating liner formed on sides and bottom of the first trench; and

    a first conductive material operable to have an electrical potential and formed on the first insulating liner;

    a second trench structure comprising;

    a second trench;

    a second insulating liner formed on sides and bottom of the second trench; and

    a second conductive material operable to have said electrical potential and formed on the second insulating liner;

    a gate structure comprising;

    a gate trench;

    a gate dielectric layer on sides and bottom of the gate trench; and

    a polysilicon gate on the gate dielectric layer in the gate trench, wherein the gate structure is spaced apart from the first trench structure and the second trench structure, wherein no trench structure is located between the first trench structure and the gate structure or between the second trench structure and the gate structure;

    an n-type vertically oriented drift region extending below the gate structure, wherein the first trench structure and the second trench structure are deeper than a top of the n-type vertically oriented drift layer;

    a p-type body region type over the n-type vertically extended drift region, contacting the gate dielectric layer at a side of the gate trench; and

    an n-type source region over the p-type body region, contacting to the gate dielectric layer at the side of the gate trench and extending to a surface of the semiconductor substrate between the first trench structure and the gate structure.

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