Magnetic tunnel junctions
First Claim
1. A magnetic tunnel junction comprising:
- a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic tunnel insulator material between the first and second electrodes;
the first magnetic electrode comprising dielectric material, the magnetic recording material being between the dielectric material and the tunnel insulator, the first magnetic electrode comprising non-magnetic conductive material, the dielectric material being between the non-magnetic conductive material and the magnetic recording material, the first magnetic electrode being devoid of any magnetic polarizer region between the dielectric material and the non-magnetic conductive material; and
the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising;
two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;
a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions, the Os-containing material being directly against the CoxFeyBz; and
the other spaced magnetic region comprising magnetic Co-containing material directly against the Os-containing material; and
non-magnetic NisFetCru directly against the magnetic Co-containing material, where “
s”
is from 50 to 100, “
t”
is from 0 to 30, and “
u”
is from 0 to 45;
the Co-containing material being between the Os-containing material and the non-magnetic NisFetCru.
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Accused Products
Abstract
A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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Citations
9 Claims
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1. A magnetic tunnel junction comprising:
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a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; the first magnetic electrode comprising dielectric material, the magnetic recording material being between the dielectric material and the tunnel insulator, the first magnetic electrode comprising non-magnetic conductive material, the dielectric material being between the non-magnetic conductive material and the magnetic recording material, the first magnetic electrode being devoid of any magnetic polarizer region between the dielectric material and the non-magnetic conductive material; and the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising; two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions, the Os-containing material being directly against the CoxFeyBz; and the other spaced magnetic region comprising magnetic Co-containing material directly against the Os-containing material; and non-magnetic NisFetCru directly against the magnetic Co-containing material, where “
s”
is from 50 to 100, “
t”
is from 0 to 30, and “
u”
is from 0 to 45;
the Co-containing material being between the Os-containing material and the non-magnetic NisFetCru. - View Dependent Claims (2, 3, 4)
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5. A magnetic tunnel junction comprising:
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a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising; two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions; the other magnetic region comprising a magnetic Co-containing material; and the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “
a”
is from 0 to 50, “
b”
is from 50 to 99, and “
c”
is from 1 to 50; andthe magnetic recording material comprising at least two of the elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz.
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6. A magnetic tunnel junction comprising:
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a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising; two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions; the other magnetic region comprising a magnetic Co-containing material; and the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “
a”
is from 0 to 50, “
b”
is from 50 to 99, and “
c”
is from 1 to 50; andthe magnetic recording material comprising elemental-form W, elemental-form Mo directly against the CoxFeyBz.
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7. A magnetic tunnel junction comprising:
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a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising; two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions; the other magnetic region comprising a magnetic Co-containing material; and the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “
a”
is from 0 to 50, “
b”
is from 50 to 99, and “
c”
is from 1 to 50; andthe magnetic recording material comprising elemental-form Mo directly against the CoxFeyBz.
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8. A magnetic tunnel junction comprising:
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a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising; two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions; the other magnetic region comprising a magnetic Co-containing material; and the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “
a”
is from 0 to 50, “
b”
is from 50 to 99, and “
c”
is from 1 to 50; andthe magnetic recording material comprising elemental-form Fe directly against the CoxFeyBz.
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9. A magnetic tunnel junction comprising:
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a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising; two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “
x”
is from 0 to 90, “
y”
is from 10 to 90, and “
z”
is from 10 to 50;
the CoxFeyBz being directly against the tunnel insulator;a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions; the other magnetic region comprising a magnetic Co-containing material; and the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “
a”
is from 0 to 50, “
b”
is from 50 to 99, and “
c”
is from 1 to 50; andthe magnetic recording material comprising CoaFebTac directly against the CoxFeyBz.
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Specification