Microelectromechanical pressure sensor including reference capacitor
First Claim
1. An apparatus comprising:
- a silicon die including a vibratory diaphragm, the silicon die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port;
a capacitor electrode layer disposed along a bottom of the silicon die and across the bottom silicon die port, the capacitor electrode layer including;
a first electrode included in a first micro-electromechanical (MEMs) capacitor, the first electrode being coextensive with the top silicon die port; and
a second electrode included in a second MEMs capacitor, the second electrode being coplanar with and surrounding the first electrode.
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Abstract
This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.
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Citations
20 Claims
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1. An apparatus comprising:
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a silicon die including a vibratory diaphragm, the silicon die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port; a capacitor electrode layer disposed along a bottom of the silicon die and across the bottom silicon die port, the capacitor electrode layer including; a first electrode included in a first micro-electromechanical (MEMs) capacitor, the first electrode being coextensive with the top silicon die port; and a second electrode included in a second MEMs capacitor, the second electrode being coplanar with and surrounding the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 13)
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7. An apparatus comprising:
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a silicon die including a vibratory diaphragm, the silicon die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port; and a capacitor electrode layer disposed along a bottom of the silicon die and across the bottom silicon die port, the capacitor electrode layer including; a first electrode included in a first micro-electromechanical (MEMs) capacitor, the first electrode being coextensive with the top silicon die port; and a second electrode included in a second MEMs capacitor, the second electrode being coplanar with and surrounding the first electrode, the capacitor electrode being disposed on a substrate, the substrate including an integrated circuit. - View Dependent Claims (8, 9, 10, 11, 12)
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14. A method, comprising:
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forming a top portion of a silicon die with a top silicon die port extending through to a vibratory membrane; forming a bottom portion of the silicon die with vias extending through; coupling the top portion of the silicon die to the bottom portion of the silicon die to define a cavity; and forming a capacitor electrode layer onto a bottom of the coupled top portion of the silicon die and the bottom portion of the silicon die, the capacitor electrode layer extending over at least one via, the forming the capacitor electrode layer including; forming a first electrode included in a first micro-electromechanical (MEMs) capacitor, the first electrode being coextensive with the top silicon die port; and forming a second electrode included in a second MEMs capacitor, the second electrode being coplanar with and extending around the first electrode. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification