Semiconductor nanocrystals used with LED sources
First Claim
1. A light converting composition comprising luminescent semiconductor nanocrystals capable of receiving substantially all of the fixed wavelength range of light of a light source and converting said fixed wavelength range of light to at least one different wavelength range of light, wherein said luminescent semiconductor nanocrystals comprise undoped, direct bandgap, luminescent low reabsorption (LR) semiconductor nanocrystals, having, simultaneously, an emission center core surrounded by at least one absorbing shell, wherein the emission and absorption of said low reabsorption (LR) semiconductor nanocrystals is physically separated to provide well separated absorption and emission spectral bands reducing self-quenching of the emission of the low reabsorption (LR) semiconductor nanocrystals to zero, wherein said at least one absorbing shell has 5 to 500 times the volume of said emission center core, and wherein said absorbing shell comprises two to twenty monolayers.
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Abstract
The present invention relates to the use of light-converting, colloidal, doped semiconductor nanocrystals to provide a new generation of high performance, low cost monochromatic and white light sources based on LEDs.
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Citations
17 Claims
- 1. A light converting composition comprising luminescent semiconductor nanocrystals capable of receiving substantially all of the fixed wavelength range of light of a light source and converting said fixed wavelength range of light to at least one different wavelength range of light, wherein said luminescent semiconductor nanocrystals comprise undoped, direct bandgap, luminescent low reabsorption (LR) semiconductor nanocrystals, having, simultaneously, an emission center core surrounded by at least one absorbing shell, wherein the emission and absorption of said low reabsorption (LR) semiconductor nanocrystals is physically separated to provide well separated absorption and emission spectral bands reducing self-quenching of the emission of the low reabsorption (LR) semiconductor nanocrystals to zero, wherein said at least one absorbing shell has 5 to 500 times the volume of said emission center core, and wherein said absorbing shell comprises two to twenty monolayers.
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12. An LED source comprising an LED wafer and at least one layer of a light converting composition comprising luminescent semiconductor nanocrystals capable of receiving substantially all of the light of the LED wafer and converting said light of the LED wafer to at least one different wavelength range of light, wherein said undoped, direct bandgap, luminescent semiconductor nanocrystals comprise low reabsorption (LR) semiconductor nanocrystals, having, simultaneously, an emission center core surrounded by at least one absorbing shell, wherein the emission and absorption of said low reabsorption (LR) semiconductor nanocrystals is physically separated to provide well separated absorption and emission spectral bands reducing self-quenching of the emission of the low reabsorption (LR) semiconductor nanocrystals to zero, wherein said at least one absorbing shell has 5 to 500 times the volume of said emission center core, and wherein said absorbing shell comprises two to twenty monolayers.
- 13. A device comprising an LED light source in combination with a light converting composition comprising semiconductor nanocrystals capable of receiving substantially all of the light of said LED light source and converting it to at least one different wavelength range of light, wherein said semiconductor nanocrystals comprise undoped, direct bandgap, low reabsorption (LR) semiconductor nanocrystals, having, simultaneously, an emission center core surrounded by at least one absorbing shell, wherein the emission and absorption of said low reabsorption (LR) semiconductor nanocrystals is physically separated to provide well separated absorption and emission bands reducing self-quenching of the emission of the low reabsorption (LR) semiconductor nanocrystals to zero, wherein said at least one absorbing shell has 5 to 500 times the volume of said emission center core, and wherein said absorbing shell comprises two to twenty monolayers.
Specification