Reference voltage generation circuit, regulator, and semiconductor device

• US 10,067,522 B2
• Filed: 12/28/2017
• Issued: 09/04/2018
• Est. Priority Date: 05/01/2015
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Yoshii, Yusuke, Inoue, Yuki
• Primary Examiner(s): Ahmed, Yusef A
• Application Number:
  US15/857,434
• Publication Number:
  US 20180120883A1
• Time in Patent Office: 250 Days
• CPC Class Codes: G05F 1/575 characterised by the feedback circuit
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence
• CPC Class Codes: H03F 2203/45522 the FBC comprising one or more potentiometers
• CPC Class Codes: H03F 2203/45534 the FBC comprising multiple switches and being coupled between the LC and the IC
• CPC Class Codes: H03F 3/45475 using IC blocks as the active amplifying circuit
• CPC Class Codes: H03K 5/24 the characteristic being amplitude

Abstract

As one example of the invention disclosed herein, a reference voltage generation circuit has: a first reference voltage source generating a first reference voltage; a second reference voltage source generating a second reference voltage having a temperature response different from that of the first reference voltage; a first comparator comparing the first and second reference voltages to generate a first comparison signal; and a selector selectively outputting one of the first and second reference voltages as a reference voltage according to the first comparison signal.

Claims

1. A semiconductor device comprising:

a reference voltage generation circuit including;

a first reference voltage source operable to generate a first reference voltage;

a second reference voltage source operable to generate a second reference voltage, the second reference voltage having a temperature response different from a temperature response of the first reference voltage;

a first comparator operable to compare the first and second reference voltages with each other to generate a first comparison signal; and

a selector operable selectively to output one of the first and second reference voltages as a reference voltage according to the first comparison signal;

a third reference voltage source operable to generate a third reference voltage, the third reference voltage having a temperature response different from either of the temperature responses of the first and second reference voltages;

a second comparator operable to compare the second and third reference voltages with each other to generate a second comparison signal; and

a logic operator operable to generate a switching signal from the first and second comparison signals,

wherein the selector is operable to select one of the first, second, or third reference voltages as the reference voltage according to the switching signal,

wherein the semiconductor device further comprises;

a pre-regulator operable to generate a first internal supply voltage and a second internal supply voltage from an input voltage; and

a regulator operable to generate a constant voltage from the first internal supply voltage,

wherein the reference voltage generation circuit is operable to generate the reference voltage by being supplied with the second internal supply voltage from the pre-regulator, and

the regulator is operable to perform output feedback control so as to keep equal the constant voltage or a feedback voltage commensurate therewith and the reference voltage.

2. The semiconductor device of claim 1, wherein the first reference voltage has a local maximum at about −

20°

C., the second reference voltage has a local maximum at about +40°

C., and the third reference voltage has a local maximum at about +100°

C.

3. The semiconductor device of claim 1, wherein each of the first, second, and third reference voltage sources is a bandgap reference voltage source.

4. The semiconductor device of claim 3, wherein each of the first, second, and third reference voltage sources includes:

an amplifier;

a first resistor connected between an output terminal of the amplifier and a first input terminal of the amplifier;

a second resistor connected between the output terminal of the amplifier and a second input terminal of the amplifier;

a third resistor connected between the second input terminal of the amplifier and a ground terminal;

a first diode connected between the first input terminal of the amplifier and the ground terminal; and

a plurality of second diodes connected in parallel with each other between the second input terminal of the amplifier and the ground terminal.

5. The semiconductor device of claim 4, wherein a resistance ratio of a resistance value of the second resistor to a resistance value of the third resistor differs among the first, second, and third reference voltage sources.

6. The semiconductor device of claim 1, further comprising:

a buffer that receives the constant voltage to output a buffer voltage.

7. The semiconductor device of claim 6, wherein at least one of the first internal supply voltage, the constant voltage, and the buffer voltage is output externally.

8. The semiconductor device of claim 1, further comprising:

a non-volatile memory that non-volatilely stores a trimming signal.