Apparatus for low power write and read operations for resistive memory

• US 10,068,628 B2
• Filed: 06/28/2013
• Issued: 09/04/2018
• Est. Priority Date: 06/28/2013
• Status: Active Grant

• Current Assignee: Tahoe Research Limited (f/k/a Learndale Limited) (Vector Capital Corporation)
• Original Assignee: Intel Corporation
• Inventors: Wei, Liqiong, Hamzaoglu, Fatih, Wang, Yih, August, Nathaniel J., Lin, Blake C., Dray, Cyrille
• Primary Examiner(s): Dinh, Son
• Assistant Examiner(s): LEBOEUF, JEROME LARRY
• Application Number:
  US14/129,277
• Publication Number:
  US 20160125927A1
• Time in Patent Office: 1,894 Days
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 11/1677 Verifying circuits or methods
• CPC Class Codes: G11C 11/1693 Timing circuits or methods
• CPC Class Codes: G11C 13/00 Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
• CPC Class Codes: G11C 13/0002 using resistive RAM [RRAM] elements
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0011 comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
• CPC Class Codes: G11C 13/003 Cell access
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0061 Timing circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0071 Write using write potential applied to access device gate
• CPC Class Codes: G11C 2013/0076 Write operation performed depending on read result
• CPC Class Codes: G11C 2213/74 Array wherein each memory cell has more than one access device
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: G11C 29/022 in I/O circuitry
• CPC Class Codes: G11C 29/023 : in clock generator or timing circuitry
• CPC Class Codes: G11C 29/028 : with adaption or trimming of parameters

Abstract

Apparatuses for improving resistive memory energy efficiency are provided. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Claims

1. An apparatus comprising:

a resistive memory cell coupled to a bit line and a select line;

a first pass-gate coupled to the bit line;

a second pass-gate coupled to the select line; and

a multiplexer operable by an input data, wherein the input data is data to be stored in the resistive memory cell, and wherein the multiplexer is to provide a control signal to the first and second pass-gates according to a logic level of the input data.

2. The apparatus of claim 1, wherein the multiplexer is to receive at least two inputs of different pulse widths.

3. The apparatus of claim 2 further comprises logic to adjust pulse widths of the at least two inputs.

4. The apparatus of claim 2, wherein the at least two inputs are first and second write enable pulses, wherein the first write enable pulse is for controlling duration of writing a logical high to the resistive memory, and wherein the second write enable pulse is to control duration of writing a logical low to the resistive memory.

5. The apparatus of claim 1, wherein the resistive memory is at least one of:

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM);

Resistive Magnetic Random Access Memory (ReRAM);

or

Conductive Bridging Random Access Memory (CBRAM).

6. The apparatus of claim 1 further comprises:

a first write driver to drive the input data to the first pass-gate; and

a second write driver to drive an inverse of the input data to the second pass-gate.

7. The apparatus of claim 1, wherein the resistive memory is an Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) bit-cell which comprises:

a select transistor controllable by a word line; and

a magnetic tunnel junction (MTJ) device coupled in series with the select transistor.

8. A system comprising:

a processor;

a wireless interface to allow the processor to communicate with another device;

a memory coupled to the processor, the memory having apparatus which includes;

a resistive memory cell coupled to a bit line and a select line;

a first pass-gate coupled to the bit line;

a second pass-gate coupled to the select line; and

a multiplexer operable by an input data, wherein the input data is data to be stored in the resistive memory cell, and wherein the multiplexer is to provide a control signal to the first and second pass-gates according to a logic level of the input data; and

a display unit to display content processed by the processor.

9. The system of claim 8, wherein the display unit is a touch screen.