Transparent display device and method of manufacturing the same

• US 10,068,923 B2
• Filed: 06/23/2016
• Issued: 09/04/2018
• Est. Priority Date: 09/17/2015
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Jung, Seung-Ho, Choi, Chaun-Gi, Kim, Hyeon-Sik, Park, Hye-Young, Park, Hye-Hyang, Yang, Hui-Won, Lee, Eun-Young, Jeon, Joo-Hee, Yang, Su-Kyoung, Yang, Chan-Woo
• Primary Examiner(s): Lebentritt, Michael
• Application Number:
  US15/190,919
• Publication Number:
  US 20170084635A1
• Time in Patent Office: 803 Days
• Field of Search: None
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Claims

1. A transparent display device comprising:

a base substrate including a pixel area and a transmission area;

a barrier layer disposed on the base substrate;

a pixel circuit disposed on the base substrate in the pixel area;

a display structure disposed on the pixel circuit;

a transmitting structure disposed on the base substrate in the transmission area, the transmitting structure including a composition including silicon oxynitride;

an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, the adhesive layer including aluminum oxide; and

a transmitting window exposing the transmitting structure in the transmission area,

wherein the pixel area has a transmitting property and the transmission area has a transparent property defining the transparent display device.

2. The transparent display device of claim 1, wherein a refractive index of the adhesive layer is in a range of about 1.6 to about 1.8.

3. The transparent display device of claim 1, wherein a thickness of the adhesive layer is in a range of about 5 nanometers to about 30 nanometers.

4. The transparent display device of claim 1, wherein the adhesive layer has a compressive stress therein.

5. The transparent display device of claim 1, wherein the pixel circuit includes an active pattern, a gate electrode, a source electrode and a drain electrode, and

wherein the transparent display device further comprises:

a gate insulation layer disposed on the barrier layer to cover the active pattern;

an insulating interlayer which is disposed on the gate insulation layer and covers the gate electrode; and

a via insulation layer which is disposed on the insulating interlayer, covers the source electrode and the drain electrode, the source electrode and the drain electrode extending through the insulating interlayer and the gate insulation layer and contacting the active pattern.

6. The transparent display device of claim 5, wherein each of the barrier layer, the gate insulation layer and the insulating interlayer includes silicon oxynitride.

7. The transparent display device of claim 6, wherein each of the barrier layer, the gate insulation layer and the insulating interlayer extends from the pixel area to the transmission area, and the transmitting structure includes portions of the barrier layer, the gate insulation layer and the insulating interlayer extended to the transmission area.

8. The transparent display device of claim 7, wherein layers of the transmitting structure are integrally combined with one another and together have a single-layered structure.

9. The transparent display device of claim 5, further comprising a buffer layer disposed between the barrier layer and the gate insulation layer.

10. The transparent display device of claim 9, wherein each of the barrier layer, the buffer layer, the gate insulation layer and the insulating interlayer includes silicon oxynitride.

11. The transparent display device of claim 10, wherein each of the barrier layer, the buffer layer, the gate insulation layer and the insulating interlayer extends from the pixel area to the transmission area, and the transmitting structure includes portions of the barrier layer, the buffer layer, the gate insulation layer and the insulating interlayer extended to the transmission area.

12. The transparent display device of claim 11, wherein layers of the transmitting structure are integrally combined with one another and together have a single-layered structure.

13. The transparent display device of claim 5, wherein the via insulation layer is selectively disposed in the pixel area and does not extend to the transmission area.

14. The transparent display device of claim 5, wherein the display structure includes:

a pixel electrode disposed on the via insulation layer, the pixel electrode extending through the via insulation layer and contacting the drain electrode;

a display layer disposed on the pixel electrode; and

an opposing electrode disposed on the display layer and facing the pixel electrode,

wherein the transparent display device further comprises a pixel defining layer partially covering the pixel electrode on the via insulation layer.

15. The transparent display device of claim 14, wherein the pixel defining layer is selectively disposed in the pixel area and does not extend to the transmission area.

16. The transparent display device of claim 15, wherein the opposing electrode is disposed along surfaces of the pixel defining layer and the display layer, and a sidewall and a bottom face of the transmitting window, and

wherein a thickness of a portion of the opposing electrode on the sidewall and the bottom face of the transmitting window is smaller than a thickness of a portion of the opposing electrode on the surfaces of the pixel defining layer and the display layer.

17. The transparent display device of claim 14, wherein the opposing electrode is selectively disposed in the pixel area and does not extend to the transmission area.

18. A method of manufacturing a transparent display device, the method comprising:

providing a base substrate including a pixel area and a transmission area;

forming an adhesive layer on the base substrate using aluminum oxide;

forming a barrier layer on the adhesive layer using silicon oxynitride;

forming a pixel circuit on the barrier layer;

forming an insulation layer covering the pixel circuit on the barrier layer; and

forming a display structure on the insulation layer,

wherein the pixel area has a transmitting property and the transmission area has a transparent property defining the transparent display device.

19. The method of claim 18, wherein the adhesive layer has a compressive stress therein.

20. The method of claim 18, wherein the forming the pixel circuit includes:

forming a semiconductor layer on the barrier layer; and

performing a crystallization process on the semiconductor layer,

wherein the crystallization process is performed at a temperature in a range of about 380 degrees Celsius to about 500 degrees Celsius.