Array substrate of OLED display device and manufacturing method thereof
First Claim
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1. A manufacturing method of an array substrate of an OLED display device, comprising steps of:
- providing a substrate;
using a first mask pattern to form a semiconductor pattern on the substrate, which includes active areas of a first thin film transistor and a second thin film transistor in each driving unit;
based on the above pattern, using a second mask pattern to form an electro-conductive channel of the first thin film transistor and an electro-conductive channel of the second thin film transistor on the substrate; and
using an ion-injection method to form a channel doping area, and form a source electrode doping area and a drain electrode doping area beside two sides of each of the channel doping areas;
based on the above pattern, forming a pattern of an insulation layer;
based on the above pattern, using a third mask pattern to form a pattern of a first metal layer, which includes a gate electrode of the first thin film transistor and a gate electrode of the second thin film transistor;
based on the above pattern, forming a pattern of an interlayer; and
using an fourth mask pattern to form a via which is in the first thin film transistor and passes through the insulation layer and the interlayer, and a via which is in the second thin film transistor and passes through the insulation layer and the interlayer;
based on the above pattern, using a fifth mask pattern to form a pattern of a second metal layer, which includes a source electrode and a drain electrode of the first thin film transistor, a source electrode and a drain electrode of the second thin film transistor, and a data line and a pixel electrode; and
based on the above pattern, forming a protecting layer, and etching to remove the protecting layer on the surface of the pixel electrode through a sixth mask pattern.
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Abstract
A manufacturing method of an array substrate of an OLED display device is provided. Active areas of a first thin film transistor T1 and a second thin film transistor T2 are formed by a first mask; channel doping areas, source electrode doping areas and drain electrode doping areas of T1 and T2 are formed by a second mask; gate electrodes of T1 and T2 are formed by a third mask; vias are formed by a fourth mask; source electrodes and drain electrodes of T1 and T2, a data line and a pixel electrode are formed by a fifth mask. The manufacturing method can simplify the process steps.
7 Citations
15 Claims
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1. A manufacturing method of an array substrate of an OLED display device, comprising steps of:
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providing a substrate; using a first mask pattern to form a semiconductor pattern on the substrate, which includes active areas of a first thin film transistor and a second thin film transistor in each driving unit; based on the above pattern, using a second mask pattern to form an electro-conductive channel of the first thin film transistor and an electro-conductive channel of the second thin film transistor on the substrate; and
using an ion-injection method to form a channel doping area, and form a source electrode doping area and a drain electrode doping area beside two sides of each of the channel doping areas;based on the above pattern, forming a pattern of an insulation layer; based on the above pattern, using a third mask pattern to form a pattern of a first metal layer, which includes a gate electrode of the first thin film transistor and a gate electrode of the second thin film transistor; based on the above pattern, forming a pattern of an interlayer; and
using an fourth mask pattern to form a via which is in the first thin film transistor and passes through the insulation layer and the interlayer, and a via which is in the second thin film transistor and passes through the insulation layer and the interlayer;based on the above pattern, using a fifth mask pattern to form a pattern of a second metal layer, which includes a source electrode and a drain electrode of the first thin film transistor, a source electrode and a drain electrode of the second thin film transistor, and a data line and a pixel electrode; and based on the above pattern, forming a protecting layer, and etching to remove the protecting layer on the surface of the pixel electrode through a sixth mask pattern. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method of an array substrate of an OLED display device, comprising steps of:
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providing a substrate; using a first mask pattern to form a semiconductor pattern on the substrate, which includes active areas of a first thin film transistor and a second thin film transistor in each driving unit; based on the above pattern, using a second mask pattern to form an electro-conductive channel of the first thin film transistor and an electro-conductive channel of the second thin film transistor on the substrate; and
using an ion-injection method to form a channel doping area, and form a source electrode doping area and a drain electrode doping area beside two sides of each of the channel doping areas;based on the above pattern, forming a pattern of an insulation layer; based on the above pattern, using a third mask pattern to form a pattern of a first metal layer, which includes a gate electrode of the first thin film transistor and a gate electrode of the second thin film transistor; based on the above pattern, forming a pattern of an interlayer; and
using an fourth mask pattern to form a via which is in the first thin film transistor and passes through the insulation layer and the interlayer, and a via which is in the second thin film transistor and passes through the insulation layer and the interlayer; andbased on the above pattern, using a fifth mask pattern to form a pattern of a second metal layer, which includes a source electrode and a drain electrode of the first thin film transistor, a source electrode and a drain electrode of the second thin film transistor, and a data line and a pixel electrode. - View Dependent Claims (7, 8, 9, 10)
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11. An array substrate of an OLED display device, comprising:
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a substrate; an active layer formed on the substrate and including;
a channel doping area, a source electrode doping area and a drain electrode doping area of a first thin film transistor; and
a channel doping area, a source electrode doping area and a drain electrode doping area of a second thin film transistor;a gate electrode insulation layer formed above the substrate; a first metal layer formed above the substrate and including a gate electrode of the first thin film transistor and a gate electrode of the second thin film transistor; an interlayer formed above the substrate; vias passing through the interlayer and the gate electrode insulation layer; and a second metal layer formed above the substrate and including;
a source electrode and a drain electrode of the first thin film transistor;
a source electrode and a drain electrode of the second thin film transistor; and
a data line and a pixel electrode;wherein the source electrode of the first thin film transistor is connected with the data line;
the drain electrode of the first thin film transistor is connected with the gate electrode of the second thin film transistor; andthe drain electrode of the second thin film transistor is connected with the pixel electrode. - View Dependent Claims (12, 13, 14, 15)
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Specification