Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage

• US 10,068,972 B2
• Filed: 05/18/2016
• Issued: 09/04/2018
• Est. Priority Date: 05/27/2015
• Status: Active Grant

• Current Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Original Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Inventors: Sugimoto, Masahiro, Aoi, Sachiko, Mizuno, Shoji, Miyahara, Shinichiro
• Primary Examiner(s): Li, Meiya
• Assistant Examiner(s): Chou, Shih Tsun A
• Application Number:
  US15/157,865
• Publication Number:
  US 20160351665A1
• Time in Patent Office: 839 Days
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.

Claims

1. A semiconductor device comprising:

a semiconductor substrate; and

a trench gate extending from a front surface of the semiconductor substrate toward a deep portion of the semiconductor substrate,

wherein the semiconductor substrate comprises;

a drift region of a first conductive type, wherein the drift region is in contact with the trench gate;

a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate;

a source region of the first conductive type, wherein the source region is disposed above the body region, is in ohmic contact with a source electrode covering the front surface of the semiconductor substrate and is in contact with the trench gate;

a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, is in ohmic contact with the source electrode and is in contact with the trench gate;

a second body region of the second conductive type, wherein the second body region is disposed above the body region, and is in ohmic contact with the source electrode; and

a high concentration front surface region of the second conductive type,

wherein at least a portion of the high concentration front surface region is at the front surface of the semiconductor substrate and an impurity concentration of the high concentration front surface region is higher than an impurity concentration of the front surface region,

wherein in a view along a direction orthogonal to the front surface of the semiconductor substrate, the front surface region is in contact with a side surface of the trench gate that is parallel to a longitudinal direction of the trench gate and the front surface region further surrounds an edge of the trench gate in the longitudinal direction,

wherein in the view along the direction orthogonal to the front surface of the semiconductor substrate, the high concentration front surface region is in contact with an edge side surface of the trench gate that connects between a pair of side surfaces of the trench gate at the edge of the trench gate in the longitudinal direction, wherein the pair of side surfaces is parallel to the longitudinal direction of the trench gate,

wherein the impurity concentration of the front surface region is higher than an impurity concentration of the body region.

2. The semiconductor device according to claim 1, wherein

the trench gate comprises:

a gate insulation film; and

a gate electrode surrounded on side and an edge with the gate insulation film,

wherein a part of the gate insulation film that is in contact with the front surface region and the source region is thicker than another part of the gate insulation film that is in contact with the body region.

3. The semiconductor device according to claim 1, wherein

a material of the semiconductor substrate is silicon carbide.

4. The semiconductor device according to claim 1, further comprising a drain region of the first conductive type disposed on a back layer portion of the semiconductor substrate below the drift region.

5. A semiconductor device comprising:

a semiconductor substrate; and

a trench gate extending from a front surface of the semiconductor substrate toward a deep portion of the semiconductor substrate,

wherein the semiconductor substrate comprises;

a drift region of a first conductive type, wherein the drift region is in contact with the trench gate;

a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate;

a source region of the first conductive type, wherein the source region is disposed above the body region, is in ohmic contact with a source electrode covering the front surface of the semiconductor substrate and is in contact with the trench gate;

a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, is in ohmic contact with the source electrode and is in contact with the trench gate; and

a high concentration front surface region of the second conductive type, wherein at least a portion of the high concentration front surface region is at the front surface of the semiconductor substrate and an impurity concentration of the high concentration front surface region is higher than an impurity concentration of the front surface region,

wherein in a view along a direction orthogonal to the front surface of the semiconductor substrate, the front surface region is in contact with a side surface of the trench gate that is parallel to a longitudinal direction of the trench gate and the front surface region further surrounds an edge of the trench gate in the longitudinal direction,

wherein in the view along the direction orthogonal to the front surface of the semiconductor substrate, the high concentration front surface region is in contact with an edge side surface of the trench gate that connects between a pair of side surfaces of the trench gate at the edge of the trench gate in the longitudinal direction, wherein the pair of side surfaces is parallel to the longitudinal direction of the trench gate.

6. The semiconductor device according to claim 5, wherein

the trench gate comprises:

a gate insulation film; and

a gate electrode surrounded on side and an edge with the gate insulation film,

wherein a part of the gate insulation film that is in contact with the front surface region and the source region is thicker than another part of the gate insulation film that is in contact with the body region.

7. The semiconductor device according to claim 5, wherein

a material of the semiconductor substrate is silicon carbide.

8. The semiconductor device according to claim 5, further comprising a drain region of the first conductive type disposed on a back layer portion of the semiconductor substrate below the drift region.