Light-emitting device and manufacturing method thereof
First Claim
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1. A light-emitting device, comprising:
- a substrate having a top surface, wherein the top surface comprises a first portion and a second portion;
a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion and exposes the second portion; and
a second semiconductor stack comprising a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface;
wherein the first side wall and the second portion of the top surface form an acute angle α
between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β
between thereof, andwherein the top surface further comprises an edge and the second portion surrounds the first portion and is between the edge and the first portion, and a narrowest distance between the first portion and the edge is between 1 μ
m and 25 μ
m.
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Abstract
A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.
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Citations
15 Claims
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1. A light-emitting device, comprising:
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a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion and exposes the second portion; and a second semiconductor stack comprising a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the second portion of the top surface form an acute angle α
between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β
between thereof, andwherein the top surface further comprises an edge and the second portion surrounds the first portion and is between the edge and the first portion, and a narrowest distance between the first portion and the edge is between 1 μ
m and 25 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification